Method for processing a monocrystalline substrate and micromechanical structure

ABSTRACT

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to German Patent Application Serial No.10 2016 118 268.0, which was filed Sep. 27, 2016, and is incorporatedherein by reference in its entirety.

TECHNICAL FIELD

Various embodiments relate generally to a method for processing amonocrystalline substrate and to a micromechanical structure.

BACKGROUND

In general a microelectromechanical system (MEMS) or a micromechanicalsystem (MMS) can be integrated in small devices or systems which combineelectrical and mechanical components with one another. By way ofexample, the term “micromechanics”, related to micromechanical parts,can be used to describe small integrated devices or systems whichinclude one or a plurality of micromechanical elements and possibly, butnot necessarily, electrical components and/or electronic components.

In general a microelectromechanical system can be used to provide forexample an electromechanical transducer, e.g. actuator or sensor. An MMSmay include a deflectable structure, such as e.g. a membrane or acantilever. Used as a drive, a microelectromechanical system (MEMS) mayinclude one or a plurality of MMS whose deflectable structure can beelectrically deflected. Used as a sensor (e.g. microphone), an MEMS canprovide an electrical signal in reaction to a deflection (also referredto as stroke) of the deflectable structure of the MMS.

A microstructure such as, for example, a membrane in a microtransducer(for example microphone or microloudspeaker) or a cantilever in anatomic force microscope (AFM) can have stringent requirements, inparticular in respect of the bending properties and/or the deflectionbehavior and the dynamic behavior under resonance conditions dependingon the respective application.

Both the electrical and the mechanical requirements made ofmembrane-based sensors (e.g. microphones) increase with each successorgeneration and/or with the passage of time. By way of example, eversmaller sensors are demanded which tolerate higher loudness levels orthe sound pressure level associated therewith, have a greater robustnessand provide a higher signal-to-noise ratio (SNR).

As an assessment criterion for evaluating the quality and/ormarketability of a sensor, both the SNR (Signal to Noise Ratio) valueand the acoustic overload (also referred to as AOL) are of importance. Ahigher SNR enables the useful signal to be clearly demarcated from thebackground noise. At the same time the sensor should be able to clearlypick up a high sound pressure level (e.g. in concerts), without sounddistortions occurring (also referred to as THD or total harmonicdistortion). The electrical performance may be closely linked to themechanical properties of the micromechanical structure.

By way of example, stringent requirements are made in respect of themechanical robustness of a sensor for use in devices (e.g. inSmartphones, Smartwatches, Tablet PCs, Notebooks, Head-Sets or othereveryday items of use) which are exposed both to mechanical loads(vibrations, fall) and to external environmental influences (dust,water, etc.). The higher the mass of the terminal device, the higher themechanical load (illustratively pressure surge) can be for themicrophone in the event of a so-called fall or impact of the device. Inorder to increase the robustness of a membrane-based sensor,conventionally various concepts are implemented, but they cannotsimultaneously cover all requirements on account of the material systemsavailable.

In one conventional concept, satisfying the requirement in respect ofrobustness, which requirement is (greatly) dependent on the mass of theterminal device, is controlled by way of the membrane thickness. Thethicker the membrane, the more robust it is in the event of a dynamicpressure surge. However, this forces a compromise since, as the membranethickness increases, the mechanical properties such as restoringbehavior and sensitivity are also altered. In order to satisfy therequirements in respect of the restoring stress range whilesimultaneously complying with the sensitivity, a soft membrane composedof polysilicon (also referred to as poly-Si) is used, therefore, whichis made additionally softer by its being implanted to a greater level.The smaller the membrane diameter, the lower the limit for implantationat which a degeneration of the poly-Si occurs, which leads to anadditional induction of stress, with the result that the membranebuckles (also referred to as compressive membrane buckling at theimplantation limit). The sensor thus becomes unusable, such that themaximum implantation of a small membrane diameter (e.g. less than 800micrometers) is defined by the implantation limit.

Since there is a constantly increasingly endeavor to attain ever smallerdevices, on account of the associated reduction of the housing sizes ofthe terminal devices it is necessary likewise to reduce the size of theMEMS and thus the membrane diameter. In order to retain thefunctionality of the MEMS it is necessary to comply with a sufficientdistance from the implantation limit during implantation. Given apredefined restoring stress range, this can only be compensated for byreducing the membrane thickness, but this in turn results in a lowerrobustness.

In the case of small membrane diameters it is therefore conventionallyaccepted that the sensor has a low life expectancy or a low sensitivity.

In an alternative concept, geometric modifications that influence themechanical properties are conventionally implemented on the MEMS. By wayof example, so-called ventilation flaps are incorporated into themembrane, which attenuate a pressure surge and thus compensate for alower robustness of the membrane. However, the ventilation flaps requirea precise setting of the so-called corner frequency (or cut-offfrequency). Alternatively, so-called corrugation rings are incorporatedinto the membrane, at which the membrane is corrugated. Theimplementation of the corrugation rings and/or of the ventilation flapsincreases the production costs, generates additional stress points inthe membrane and/or counterelectrode and increases the risk of themembrane “sticking” to other component parts, e.g. in the case of adouble electrode configuration (also referred to as dual backplatearrangement).

SUMMARY

In various embodiments, a method of processing a monocrystallinesubstrate is provided. The method may include severing the substratealong a main processing side into at least two monocrystalline substratesegments, and forming a micromechanical structure comprising at leastone monocrystalline substrate segment of the at least two substratesegments.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. The drawings are not necessarilyto scale, emphasis instead generally being placed upon illustrating theprinciples of the invention. In the following description, variousembodiments of the invention are described with reference to thefollowing drawings, in which:

FIGS. 1A to 1C show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 2A to 2C show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 3A to 3C show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 4A to 4C show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 5A to 5D show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 6A to 6C show in each case a micromechanical structure in a methodin accordance with various embodiments;

FIGS. 7A and 7B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIGS. 8A and 8B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIGS. 9A and 9B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIG. 10 shows a micromechanical structure in a method in accordance withvarious embodiments;

FIGS. 11A and 11B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIGS. 12A and 12B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIGS. 13A and 13B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIG. 14 shows a micromechanical structure in a method in accordance withvarious embodiments;

FIGS. 15A and 15B show in each case a micromechanical structure in amethod in accordance with various embodiments;

FIG. 16 shows a micromechanical structure in a method in accordance withvarious embodiments; and

FIG. 17 shows a method in accordance with various embodiments.

DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific details and embodiments inwhich the invention may be practiced.

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration”. Any embodiment or design described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments or designs.

In the following detailed description, reference is made to theaccompanying drawings, which form part of this description and show forillustration purposes specific embodiments in which the invention can beimplemented. In this regard, direction terminology such as, forinstance, “at the top”, “at the bottom”, “at the front”, “at the back”,“front”, “rear”, etc. is used with respect to the orientation of thefigure(s) described. Since component parts of embodiments can bepositioned in a number of different orientations, the directionterminology serves for illustration and is not restrictive in any waywhatsoever. It goes without saying that other embodiments can be usedand structural or logical changes can be made, without departing fromthe scope of protection of the present invention. It goes without sayingthat the features of the various exemplary embodiments described hereincan be combined with one another, unless specifically indicatedotherwise. Therefore, the following detailed description should not beinterpreted in a restrictive sense, and the scope of protection of thepresent invention is defined by the appended claims.

The term “exemplary” is used here with the meaning “serving as anexample, exemplar or illustration”. Any embodiment or configuration thatis described here as “exemplary” should not necessarily be understood aspreferred or advantageous vis-à-vis other embodiments or configurations.

The term “above” with respect to deposited material that is formed“above” a side or surface can be understood in accordance with variousembodiments to mean that the deposited material is formed “directly on”,e.g. in direct (e.g. physical or adjoining) contact with, the statedside or surface. The term “above” with respect to a deposited materialthat is formed “above” a side or surface can be understood in accordancewith various embodiments to mean that the deposited material is formed“indirectly on” the stated side or surface, wherein one or a pluralityof additional layers are arranged between the stated side or surface andthe deposited material. The deposition of the material can be carriedout for example by means of chemical vapor deposition (CVD) or physicalvapor deposition (PVD).

The term “lateral” or “laterally” with respect to the “lateral” extentof a structure (or of a substrate, a wafer or a carrier) or “laterally”adjoining can be used in accordance with various embodiments to denotean extent or a positional relationship along a surface of a substrate, awafer or a carrier. That means that a surface of a substrate (forexample a surface of a carrier or a surface of a wafer) can serve as areference which is generally designated as the main processing surfaceof the substrate (or the main processing surface of the carrier or ofthe wafer). Furthermore, the term “width”, which is used with regard toa “width” of a structure (or of a structure element) can be used here todenote the lateral extent of a structure.

Furthermore, the term “height”, which is used with respect to a heightof a structure (or of a structure element), can be used here to denotethe extent of a structure along a direction perpendicular to the surfaceof a substrate (e.g. perpendicular to the main processing surface of asubstrate), i.e. a vertical extent. The term “thickness”, which is usedwith regard to a “thickness” of a layer, can be used here to denote thespatial extent of the layer perpendicular to the surface of the carrier(of the material) on which the layer is deposited, i.e. a verticalextent. If the surface of the carrier is parallel to the surface of thesubstrate (for example to the main processing surface), the thickness ofthe layer applied on the carrier can be equal to the height of thelayer. Furthermore, a “vertical” structure can denote a structure whichextends in a direction perpendicular to the lateral direction (e.g.perpendicular to the main processing surface of a substrate), and a“vertical” extent can denote an extent along a direction perpendicularto a lateral direction (for example an extent perpendicular to the mainprocessing surface of a substrate).

In the context of this description, the terms “connected” and “coupled”are used to describe both a direct and an indirect connection (e.g.ohmically and/or electrically conductive, e.g. an electricallyconductive connection) and a direct or indirect coupling. In thefigures, identical or similar elements are provided with identicalreference signs, in so far as this is expedient. A coupling can beunderstood as a mechanical coupling.

The term “formed therefrom” with respect to the fact that a firststructure (e.g. body, layer, section) is formed from a second structure(e.g. body, layer, section) can be understood to mean that the secondstructure is used for forming the first structure, that is to say thatthe first structure includes at least one part of the second structure.For the purpose of forming the first structure, the second structure canoptionally be processed (e.g. chemically, electrically and/orstructurally altered), for example material can be removed from and/oradded to it, it can be reshaped or cleaned. Alternatively, the secondstructure can be transformed into the first structure withoutalteration.

In the context of this description, a metal (also referred to asmetallic material) may include at least one metallic element (i.e. oneor a plurality of metallic elements) (or be formed therefrom), e.g. atleast one element from the following group of elements: copper (Cu),iron (Fe), titanium (Ti), nickel (Ni), silver (Ag), chromium (Cr),platinum (Pt), gold (Au), magnesium (Mg), aluminum (Al), zirconium (Zr),tantalum (Ta), molybdenum (Mo), tungsten (W), vanadium (V), barium (Ba),indium (In), calcium (Ca), hafnium (Hf), samarium (Sm), silver (Ag),and/or lithium (Li). Furthermore, a metal may include a metalliccompound (e.g. an intermetallic compound or an alloy) or be formedtherefrom, e.g. a compound including at least two metallic elements(e.g. from the group of elements), such as e.g. bronze or brass, or e.g.a compound including at least one metallic element (e.g. from the groupof elements) and at least one nonmetallic element (e.g. carbon), such ase.g. steel. Optionally, the metal may include alloying elements (whoseproportion by mass is e.g. less than 10%, e.g. individually or intotal), e.g. chromium, silicon, molybdenum, nickel, vanadium, carbon,manganese, phosphorus, silver, tin, zinc.

Microphones and/or microloudspeakers which are realized using chiptechnology are usually fabricated using silicon technology. Siliconmicrophones processed by micromachining are capacitive transducershaving a flexible membrane, which moves in the sound field, and having astatic perforated electrode, which is referred to as a backplate or anelectrode. In accordance with the concept of excess pressure, themembrane can be exposed to pressure differences of up to 10 bar. In suchcases, conventional membranes fail since their breaking strength or amaximum mechanical loading (e.g. force or stress) that the membrane canwithstand (breaking resistance) is exceeded.

In accordance with various embodiments, a micromechanical system or amicroelectromechanical system can be used to provide an actuator orsensor, for example.

In accordance with various embodiments, an electromechanical (e.g.sensor-based or actuator-based) transducer (e.g. sound transducer) isprovided which includes a monocrystalline substrate segment. Theactuator-based transducer complementary to the sensor-based transducermay include a microloudspeaker, for example, which has to be actuated inorder to bring about a stroke, which generates an air displacement andtherefore a sound pressure level.

A functional structure of a micromechanical structure, such as amembrane, for example, can be clamped, i.e. be fixed to an anchored(i.e. clamped, embedded and/or fixed) section (also referred to assecuring section) and be vibratable or deflectable in the cantileveredsection. The deflectable region can be part of the cantilevered section(also referred to as freely suspended section). By way of example, theanchored section and the cantilevered section can be monocrystalline(e.g. monolithically and/or in a manner adjoining one another) and/or beformed by means of processing of the monocrystalline substrate piece.

A micromechanical system (MMS) or microelectromechanical system (MMSwith an electrical component) can generally be used as an actuator orsensor. By way of example, the system can be configured to convertbetween electrical energy and mechanical energy.

In accordance with various embodiments, it has been recognized thatintegration of SiC into a microelectromechanical system (such as e.g. amicrophone) provides a multiplicity of possibilities. In comparison withpoly-Si, SiC has a higher mechanical hardness and a higher elasticmodulus (also referred to as modulus of elasticity or Young's modulus).By way of example, poly-Si can have a mechanical hardness ofapproximately 12.5 gigapascals (GPa) and an elastic modulus ofapproximately 180 GPa. By contrast, SiC can have a mechanical hardnessin a range of approximately 20 GPa to approximately 50 GPa and anelastic modulus in a range of approximately 200 GPa to approximately 600GPa. Optionally, in accordance with various embodiments, by means ofintroducing impurity atoms into the SiC, the elastic modulus thereof canbe reduced, for example to 500 GaP or less (and/or more than 200 GPa).

The greater hardness properties of SiC can contribute to protecting themicromechanical structure (e.g. the membrane thereof) against damage,e.g. against membrane damage caused externally. Besides the mechanicalhardness, the elastic modulus and an optional prestress of the SiC layer(illustratively internal strain, which can be caused artificially, forexample) can influence the mechanical properties of the micromechanicalstructure. In the case of small deflections of the membrane, the layerstress can dominate the deflection behavior, and the influence of theelastic modulus can increase with increasing deflection of the membrane.

In general, in accordance with various embodiments, the SiC membrane canbe made thinner than a membrane composed of poly-SiC, without losingrobustness in the process. A thinner membrane can enable a greaterdeflection, such that smaller pressure differences can be detected witha good signal level. In other words, a thinner membrane can promote agreater sensitivity and/or a greater SNR.

The mechanical properties (e.g. oscillation properties and/or prestress)and the electrical properties (e.g. electrical conductivity) of SiC canoptionally be modified subsequently, e.g. by means of the implantationof nitrogen (N₂).

The inert, chemical properties, such as e.g. the hydrophobicity (lowtendency toward adhesion), of the SiC material can have a tendencytoward particle contamination and/or reduce the risk of sticking of themembrane.

Optionally, the monocrystalline material (e.g. semiconductor material),e.g. monocrystalline SiC, may not be used exclusively as membranematerial, but rather also as stabilization below a poly-Si membrane. Itis thereby possible to combine a conventional method of layermodification of poly-Si with the mechanical properties of themonocrystalline material (e.g. SiC). In accordance with variousembodiments, SiC can be provided as membrane material or as stabilizerof a polysilicon membrane. In contrast to a conventional membrane, SiCcan be made thinner and/or can experience greater deflections, withoutbeing damaged.

In accordance with various embodiments, “monocrystalline” or “singlecrystal” with regard to a crystallization type, a material or a body(e.g. a substrate, the substrate segment thereof or a layer) can beunderstood to mean that its building blocks (i.e. atoms, ions ormolecules) form a substantially continuous, uniform, homogeneous(illustratively macroscopic) crystal lattice. In other words, themonocrystalline crystal lattice can have a uniform alignment (alsoreferred to as main alignment), that is to say that the spatiallyaveraged orientation of the crystal building blocks can be substantiallyidentical.

This differentiates the monocrystalline crystallization type from apolycrystalline crystallization type, twinned crystallization type or anamorphous material (non-crystalline material). The amorphous materialcan have an arbitrary alignment and/or arrangement of the buildingblocks. The polycrystalline crystallization type and/or the twinnedcrystallization type may include or be formed from a multiplicity of(illustratively microscopic) crystalline grains (crystallites) which areseparated from one another by grain boundaries.

In general, the differentiation in the crystallization type can beunderstood as differentiation in the main alignment of the crystalstructure and/or as differentiation in the average deviation from themain alignment of the crystal structure. A monocrystallinecrystallization type can have a smaller average deviation from the mainalignment and/or a lower spatial density of grain boundaries and/orcrystallites than a polycrystalline crystallization type or than atwinned crystallization type.

In accordance with various embodiments, a substrate (e.g. including themonocrystalline partial region) can be processed in order to form one ora plurality of functional structures, e.g. separated from one another orinterconnected with one another. A plurality of functional structuresinterconnected with one another can form for example an electroniccircuit, e.g. a sensor array. In general, one micromechanical structureor a plurality of micromechanical structures can be formed and/orintegrated in the substrate (also referred to as chips or semiconductorchips).

Each or the micromechanical structure may include a functionalstructure. The functional structure can be arranged in a part of thesubstrate and may include at least one functional region (exactly onefunctional region or a plurality of functional regions), such as, forexample, at least one membrane or at least one cantilever. The at leastone functional region can be configured for deflection, e.g. as areaction to a mechanical signal or an electrical signal, e.g. in powerelectronics (e.g. using power components).

In accordance with various embodiments, a micromechanical structure(also referred to as an integrated micromechanical structure ormicromechanical chip) can be singulated from the substrate (or from asemiconductor wafer) by material being removed from a kerf of thesubstrate (also referred to as dividing or cutting apart the substrate).By way of example, material can be removed from the kerf of thesubstrate by scribing and breaking, splitting, blade dividing(separation), plasma dividing (separation), laser dividing or mechanicalsawing (for example by using a separating saw). After themicromechanical chip has been singulated, it can be electricallycontacted and subsequently encapsulated (e.g. in a closed or half-openfashion), e.g. by means of a molding material and/or into a chip carrier(also referred to as chip package) suitable for use in an electronicdevice. By way of example, the micromechanical chip can be connected bymeans of wires within the chip carrier and/or the chip carrier can besoldered on a printed circuit board and/or onto a leadframe.

The term semiconductor material can be understood to mean a chemicalcomposition which includes a semiconducting base material or is formedtherefrom and/or is semiconducting in an undoped state, i.e. has anelectrical conductivity in a range of approximately 10⁻⁶ siemens/meterto approximately 10⁶ siemens/meter. During the processing of thesemiconductor material, the semiconducting base material can be doped insections, for example, which increases its electrical conductivity inthe doped locations (e.g. above 10⁶ siemens/meter). The semiconductormaterial or the semiconducting base material can for example include orbe formed from an elemental semiconductor (e.g. silicon or germanium) ora compound semiconductor (e.g. silicon carbide or SiGe).

In accordance with various embodiments, a substrate (e.g. its substratesegments) or a semiconductor region (e.g. the monocrystalline region)may include or be formed from a semiconductor material (e.g. thesemiconducting base material) of one type or of different types,including group IV semiconductors (e.g. silicon or germanium), compoundsemiconductors, e.g. group III-V compound semiconductors (for examplegallium arsenide), group III semiconductors, group V semiconductors orsemiconducting polymers. In a plurality of embodiments, the substrateand/or the semiconductor region (e.g. the circuit region thereof) can beformed from silicon (doped or undoped). In a plurality of alternativeembodiments, the substrate can be a silicon-on-insulator (SOI) wafer(e.g. the second substrate). As an alternative, any other suitablesemiconductor material can be used for the substrate and/or thesemiconductor region, for example a semiconductor compound(semiconducting chemical compound) such as gallium phosphide (GaP),indium phosphide (InP), silicon carbide (SiC) or gallium nitride (GaN),but also any suitable ternary semiconductor compound or quaternarysemiconductor compound, such as, for example, indium gallium arsenide(InGaAs).

Illustratively, the method provided in accordance with variousembodiments can result in a micromechanical structure whosemonocrystalline layer illustratively is chemically purer, and has fewertwin boundaries and a larger thickness, e.g. more than 10 nanometers(topmost boundary, which is possible by means of conventionalcarbonization). Furthermore, the monocrystalline layer provided can bestrain-neutral, i.e. be produced without a prestress, which increasesthe room for subsequent adaptation.

FIG. 1A, FIG. 1B and FIG. 1C illustrate in each case a method withvarious embodiments in a schematic side view or cross-sectional view(e.g. with the viewing direction along a main processing side 102 o).

The method may include, in 100 a: providing a substrate 102, whichincludes or is formed from a monocrystalline region 104 (also referredto as a single-crystal region 104), e.g. providing a monocrystallinesubstrate 102. The substrate 102 may include two main processing sides102 o, 102 u, which are situated opposite one another. By way ofexample, the substrate 102 and/or the single-crystal region 104 mayinclude or be formed from a monocrystalline semiconductor material, e.g.monocrystalline GaN, monocrystalline SiC and/or monocrystalline Si. Themonocrystalline SiC can be present for example in a hexagonal crystalconfiguration (for example a 4H configuration). The hexagonal crystalconfiguration can have particularly few twin boundaries. In other words,the substrate 102 and/or the single-crystal region 104 may include or beformed from monocrystalline hexagonal SiC. The 4H configuration mayinclude or be formed from a mixture of a purely hexagonal crystalportion and a purely cubic crystal portion.

The method can furthermore include, in 100 b: severing the substrate 102along a (e.g. first) main processing side 102 o (e.g. parallel thereto)into at least two substrate segments 102 a, 102 b, each of whichincludes or is formed from a monocrystalline partial region 104 a, 104 bof the single-crystal region 104, e.g. into at least two monocrystallinesubstrate segments 102 a, 102 b. By way of example, the severing mayinclude: severing the single-crystal region 104 into two monocrystallinepartial regions 104 a, 104 b.

The method can furthermore include, in 100 c: forming a micromechanicalstructure 106 including a substrate segment 102 a (also referred to asfirst substrate segment 102 a) of the at least two substrate segments102 a, 102 b or at least one monocrystalline partial region 104 a (alsoreferred to as first partial region 104 a) of the two monocrystallinepartial regions 104 a, 104 b.

By way of example, the first substrate segment 102 a used for formingthe micromechanical structure 106 may include a monocrystalline layer104 a or be formed therefrom (or at least from a part thereof).Alternatively or additionally, the two substrate segments 102 a, 102 bcan differ in their vertical extent 102 d, 112 d; by way of example, theratio of the vertical extents 102 d, 112 d can be more thanapproximately 10, e.g. more than approximately 100, e.g. more thanapproximately 1000. By way of example, the first substrate segment 102 acan have a vertical extent 102 d (i.e. transverse extent with respect tothe main processing side 102 o) smaller than the other substrate segment102 b (also referred to as second substrate segment 102 b), e.g. lessthan approximately 10% of the vertical extent 112 d of the secondsubstrate segment 102 b, e.g. less than approximately 1% of the verticalextent 112 d of the second substrate segment 102 b, e.g. less thanapproximately 0.1% of the vertical extent 112 d of the second substratesegment 102 b. By way of example, the other substrate segment 102 b mayinclude a substrate remainder or be formed therefrom (or at least from apart thereof).

By way of example, the vertical extent 102 d of the first substratesegment 102 a can be greater than approximately 10 nm (nanometers), e.g.greater than approximately 50 nm, e.g. greater than approximately 100nm, e.g. greater than approximately 150 nm, e.g. greater thanapproximately 200 nm. Alternatively or additionally, the vertical extent102 d of the first substrate segment 102 a can be less thanapproximately 1 μm (micrometer), e.g. less than approximately 660 nm. Byway of example, the vertical extent 102 d of the first substrate segment102 a can be more than 100 nm (e.g. less than approximately 1 μm), e.g.in a range of approximately 150 nm to approximately 660 nm, e.g. in arange of approximately 280 nm to approximately 660 nm, e.g. less than330 nm, e.g. less than 200 nm.

A layer can be understood to be a sheetlike structure having a verticalextent 102 d of less than approximately 10 μm, e.g. less thanapproximately 1 μm, e.g. less than approximately 0.1 μm, e.g. less thanapproximately 0.01 μm. By way of example, the or each substrate segment102 a, 102 b (divided from the substrate 102) can be in layer form, i.e.have a vertical extent 102 d of less than approximately 10 μm, e.g. lessthan approximately 1 μm, e.g. less than approximately 0.1 μm, e.g. lessthan approximately 0.01 μm.

Substrate remainder can be understood to be a sheetlike structure havinga vertical extent 102 d of more than approximately 10 μm, e.g. more thanapproximately 100 μm, e.g. more than approximately 250 μm, e.g. morethan approximately 500 μm. Additional substrate segments can optionallybe divided from the substrate remainder by the latter being severed.

Optionally, the method may include, in 100 c: forming an additionalmicromechanical structure including the second substrate segment 102 bor at least the second partial region 104 b thereof. The secondsubstrate segment 102 b can be divided from the substrate remainderbeforehand by the latter being severed. Illustratively, the substrate102 b may include more than two substrate segments which can besuccessively separated from the substrate 102. Each of the substratesegments of the substrate 102 which is separated can be implemented in amicromechanical structure. Optionally, two substrate segments 102 a, 102b can be implemented in the same micromechanical structure. By way ofexample, the first substrate segment 102 a can provide the functionalregion of the micromechanical structure 106 and/or the second substratesegment 102 b can provide an electrode of the micromechanical structure106.

Forming the micromechanical structure can optionally include, in 100 c:processing (e.g. structuring, thinning, doping) the first substratesegment 102 a. In other words, a structure of the micromechanicalstructure 106 which is formed from the first substrate segment 102 a mayinclude the processed first substrate segment 102 a.

FIG. 2A, FIG. 2B and FIG. 2C illustrate in each case a method inaccordance with various embodiments in a schematic side view orcross-sectional view (e.g. with the viewing direction along a mainprocessing side 102 o).

In 200 a, the substrate may include a desired separating layer 202, bymeans of which the two substrate segments 102 a, 102 b are connected toone another. The desired separating layer 202 can be extended throughthe monocrystalline region 104, for example. The desired separatinglayer 202 may include the semiconductor material of the substrate 102and include an impurity in a greater impurity concentration than thefirst and/or the second substrate segment 102 a, 102 b. Alternatively oradditionally, the desired separating layer 202 may include a pluralityof defects (e.g. lattice defects, pores or capillaries). The desiredseparating layer 202 can then have a greater defect density than thefirst and/or the second substrate segment 102 a, 102 b. By way ofexample, the desired separating layer 202 can have a greater porositythan the first and/or the second substrate segment 102 a, 102 b.

By way of example, providing 100 a the substrate 102 may include, in 200a: forming the desired separating layer 202 by altering a chemicalcomposition of the first substrate 102 between the two substratesegments 102 a, 102 b.

Furthermore, the method may include, in 200 b: severing the substrate102, wherein the severing is carried out by canceling a cohesion of thedesired separating layer 202. Canceling the cohesion of the desiredseparating layer 202 can be carried out by means of (e.g. chemical,thermal or mechanical) processing of the substrate 102. By way ofexample, each substrate segment of the two substrate segments 102 a, 102b can be more resistant (e.g. more temperature-resistant) to theprocessing than the desired separating layer 202. In other words, thedesired separating layer 202 can have a greater resistance to theprocessing than each substrate segment of the two substrate segments 102a, 102 b.

A greater resistance results in a slower alteration, e.g. no alteration.By way of example, a structure (e.g. a region or a layer) and/or amaterial can be altered by the processing to a lesser extent and/or moreslowly the greater its resistance. The resistance can be related to aspecific type of processing and/or deviate from one another fordifferent types of processing.

The mechanically less resistant structure (e.g. region or layer) and/orthe mechanically less resistant material can have for example a lowerbreaking strength, breaking force, tensile strength and/or mechanicalhardness than the mechanically more resistant structure (e.g. region orlayer) and/or the mechanically more resistant material. The chemicallyless resistant structure (e.g. region or layer) and/or the chemicallyless resistant material can have for example a greater chemicalreactivity vis-à-vis a chemical processing agent than the chemicallymore resistant structure (e.g. region or layer) and/or the mechanicallymore resistant material.

A resistance can be reduced, for example, by a surface area beingincreased. Thus, for a chemically reactive etchant, for example, it ispossible to provide a larger surface area that can be attacked by theetchant. Alternatively or additionally, a resistance can be increased bya mechanical hardness and/or breaking force being increased and/or achemical reactivity vis-à-vis the etchant being reduced (also referredto as passivation). The chemical reactivity can describe the ability ofa material to enter into a chemical reaction, e.g. the speed at whichthe chemical reaction takes place or the energy threshold necessary toinitiate the reaction (also referred to as activation energy). By way ofexample, the chemical reaction can bring about a formation of pores.

In accordance with various embodiments, thermally stable in connectionwith a temperature can be understood to mean that a structure or amaterial can be loaded at least up to the temperature without losing itsfunction and/or form. By way of example, the structure or the materialat least up to the temperature can enter into no or hardly any chemicalreactions with its surroundings and/or remain chemically stable. By wayof example, the structure or the material at least up to the temperaturecan maintain its state of matter and/or its chemical composition. By wayof example, the structure or the material at least up to the temperaturecan maintain its shape and/or its volume (i.e. without changingstructurally). By way of example, the temperature up to which thestructure or the material is thermally stable can be a temperature atwhich the state of matter of the structure or of the material changes,e.g. a melting point, or can be a transition temperature, e.g. a glasstransition temperature.

In accordance with various embodiments, the severing may includesubtractive processing, such as dividing, eroding or machining, forexample.

Eroding can be understood as a group of (thermal and/or chemical)processing processes which belong to the main group of separation. Thisgroup of processing processes, in contrast to machining or dividing, canseparate individual workpiece layers or parts in a non-mechanical way.Eroding may include for example: thermal eroding (e.g. laser beamprocessing, plasma etching), chemical eroding (e.g. etching),electrochemical eroding (e.g. electroeroding). The severing can becarried out for example by eroding the desired separating layer 202,e.g. by means of thermal eroding (e.g. laser beam processing, plasmaetching), chemical eroding (e.g. etching), waterjet cutting and/orelectrochemical eroding (e.g. electrode eroding). The severing can becarried out for example by at least partly removing the desiredseparating layer 202 by means of an etchant. A connection of the twosubstrate segments 102 a, 102 b can thus be released.

Dividing may include separating the substrate 102 into a plurality ofparts, e.g. without swarf formation, e.g. by means of cracking, by meansof breaking and/or by means of cutting. The severing can be carried outfor example by dividing the substrate 102, e.g. by cracking or breakingthe substrate 102 in the desired separating layer. By way of example, amechanical force (e.g. a tensile force) can be transmitted to thedesired separating layer, which force exceeds the breaking force of thedesired separating layer.

By way of example, forming the desired separating layer 202 may include,in 200 a: altering a chemical composition between the two substratesegments 102 a, 102 b. In other words, a boundary layer 202 (alsoreferred to as interface 202) between the two substrate segments 102 a,102 b can be chemically altered. By way of example, by means of thealtering, it is possible to reduce a resistance of the substrate 102 inthe altered boundary layer 202 between the two substrate segments 102 a,102 b vis-à-vis the severing.

By way of example, forming the desired separating layer 200 may include,in 200 c: altering a chemical composition between the two substratesegments 102 a, 102 b by means of an ion implantation 204 (also referredto as doping of the boundary layer 202). Optionally, the method mayinclude, in 200 c: altering a chemical composition of the firstsubstrate segment 102 a by means of ion implantation 204 (also referredto as doping of the first substrate segment 102 a). In other words, bymeans of a first ion implantation 204 it is possible to form the desiredseparating layer 202 between the two substrate segments 102 a, 102 b andby means of an optional second ion implantation 204 it is possible toalter the first substrate segment 102 a. Optionally, the first ionimplantation 204 and the second ion implantation 204 can differ, e.g. inat least the implanted material and/or the implantation depth of theimplantation energy.

By means of the ion implantation 204, an impurity (e.g. a chemicalelement) in the form of ions of the impurity can be introduced into thesubstrate 102 and/or the first substrate segment 102 a. By way ofexample, it is possible to increase a concentration (also referred to asimpurity concentration) of the impurity in the altered section, e.g. inthe boundary layer 202 and/or in the first substrate segment 102 a.Optionally, a reaction of the impurity with the semiconductor materialof the boundary layer 202 can be excited, e.g. by means of a thermaltreatment.

By way of example, by means of the ion implantation 204 it is possibleto form (e.g. increase) an impurity concentration (i.e. a number ofatoms of the impurity) in the boundary layer 202 or in the firstsubstrate segment 102 a, for example of more than in the secondsubstrate segment 102 b and/or of more than approximately 10¹⁵ atoms percubic centimeter (atoms/cm³), e.g. of more than approximately 10¹⁶atoms/cm³, e.g. of more than approximately 10¹⁷ atoms/cm³, e.g. of morethan approximately 10¹⁸ atoms/cm³, e.g. of up to approximately 10¹⁹atoms/cm³. The ion implantation 204 can make it possible to provide theposition and/or thickness of the desired separating layer 202 with anillustratively least possible deviation from the stipulation.

Altering the chemical composition of the boundary layer 202 between thefirst substrate segment 102 a and the second substrate segment 102 b mayinclude altering a mechanical characteristic of the boundary layer 202,e.g. reducing its mechanical breaking strength and/or increasing itsporosity. By way of example, by means of the first ion implantation 204,at least hydrogen can be introduced into the boundary layer 202. Inother words, the impurity (also referred to as second impurity)introduced into the boundary layer may include or be formed from atleast hydrogen. In other words, the second impurity may include or beformed from hydrogen. Optionally, hydrogenation can be carried out, i.e.the addition of hydrogen to the chemical element or chemical elements orthe compound thereof of which the boundary layer 202 is composed.

Alternatively or additionally, defects (e.g. lattice defects, pores orcapillaries) can be formed in the boundary layer 202, e.g. by means of astructural alteration of the boundary layer 202. After the altering, theboundary layer 202 can have a greater defect density than the firstand/or second substrate segment 102 a, 102 b. By way of example, thedesired separating layer 202 can have a greater porosity than the firstand/or second substrate segment 102 a, 102 b. The defect density candenote the number of defects (e.g. pores) per volume, i.e. a spatialdensity. The defects can be produced artificially in order to set theresistance. The defects can reduce the mechanical resistance vis-à-visthe severing.

Altering the chemical composition of the first substrate segment 102 amay include altering, e.g. reducing, a mechanical characteristic (e.g.mechanical hardness, modulus of elasticity and/or mechanical stiffness)and/or electrical characteristic (e.g. electrical conductivity orelectrical resistance) of the first substrate segment 102 a. By way ofexample, the mechanical properties of the functional structure formedlater or the electrical properties of an electrode formed therefromlater can thus be adapted to predefined requirements. By way of example,by means of the optional second ion implantation 204, at least nitrogenand/or phosphorus can be introduced into the first substrate segment 102a. In other words, the impurity (also referred to as second impurity)introduced into the first substrate segment 102 a may include or beformed from at least nitrogen and/or phosphorus.

Illustratively, the first ion implantation 204 can be carried outthrough the first monocrystalline substrate segment 102 a. Alternativelyor additionally, the second ion implantation 204 can be carried out intothe first monocrystalline substrate segment 102 a.

FIG. 3A, FIG. 3B and FIG. 3C illustrate in each case a method inaccordance with various embodiments in a schematic side view orcross-sectional view.

The method may include, in 300 a: securing the substrate 102 (alsoreferred to as first substrate 102), e.g. by the first main processingside 102 o, on an additional substrate 302 (also referred to as secondsubstrate 302) before the severing. By way of example, the firstsubstrate segment 102 a can be secured on the second substrate 302.

The second substrate 302 can differ from the first substrate 102, in atleast one chemical composition and/or in at least one crystallizationtype. By way of example, the first substrate can have a higher meltingpoint than the second substrate 302 and/or of more than 900° C.Alternatively or additionally, the second substrate 302 may include orbe formed from a semiconductor material (e.g. Si), an insulator (i.e. anelectrically insulating material, such as e.g. SiO₂), a ceramic, a metal(e.g. tungsten or molybdenum).

Securing may include for example, in 300 a, connecting the firstsubstrate 102 and the second substrate 302 to one another, e.g. by meansof an adhesive, by means of bonding (e.g. by means of hydrophilicbonding, anodic bonding and/or thermal bonding) and/or by means of laserbeam welding. Bonding and/or laser beam welding can form a nonreleasableconnection. Welding can be carried out by means of local supply of heat,e.g. until local melting of the first substrate 102 and/or of the secondsubstrate, and can optionally include exerting an additional forceaction (pressure) thereon, which presses the first substrate 102 and thesecond substrate 302 against one another. Bonding can be carried out bymeans of a chemical reaction of the first substrate 102 and/or of thesecond substrate 302 with one another, which is initiated at atemperature below their melting point. Optionally, the first substrate102 and/or the second substrate 302 can be heated, e.g. to a temperaturein a range of approximately 100° C. to approximately 700° C.

Securing can be carried out by means of cohesive connection, forexample, in 300 a. The cohesive connection can be understood as aconnection in which the connection partners are held together by atomicor molecular forces. The cohesive connection can be a nonreleasableconnection (also referred to as irreversible connection), that is to saythat it can be canceled only by destruction of the connection partners.The cohesive connection may include: bonding, welding and/or adhesivebonding. By way of example, a nonreleasable connection can be formed bymeans of chemisorption. In accordance with various embodiments, thenonreleasable cohesive connection may include or be formed from anatomic-cohesive connection, i.e. can be held together by means of atomicforces (e.g. by means of chemical bonds between the connectionpartners), e.g. by means of strong atomic forces (such as in the case ofchemisorption, for example).

By way of example, connecting the first substrate 102 and the secondsubstrate 302 to one another can be carried out by means of an (e.g.hydrophilic) adhesion layer 304, as described in detail with referenceto 300 b. The adhesion layer 304 can be arranged between the firstsubstrate 102 and the second substrate 302.

By way of example, a force (also referred to as adhesion force) by whichthe first substrate 102 and the second substrate 302 are secured on oneanother, e.g. connected to one another, can be greater than a breakingforce of the desired separating layer 202. By way of example, theconnection (e.g. the adhesion layer 304) between the two substrates 102,302 can impart a force between them which is greater than their breakingforce or the breaking force of the desired separating layer 202.Relative to the area of the connection, the breaking force cancorrespond to the tensile strength (in force per area). Illustratively,a nonreleasable connection can be provided which imparts between the twosubstrates 102, 302 a force which is greater than their breaking force.The breaking force can be understood to mean force required to break orcrack the component.

In other words, the connection between the first substrate 102 and thesecond substrate 302 can have a greater resistance to the severing thanthe desired separating layer 202.

Securing the first substrate 102 on the second substrate 302 andsubsequently severing the first substrate 102 can also be referred to astransferring the first substrate segment 102 a.

Furthermore, the method may include, in 300 a, severing the substrate102, wherein the first substrate segment 102 a is or remains secured onthe second substrate 302.

In 300 b, the substrate 102 may include an adhesion layer 304. By way ofexample, providing the substrate 102, may include, in 300 b: forming theadhesion layer 304 on the first main processing side 102 o. The adhesionlayer 304 can be formed for example above (e.g. in physical contactwith) the first substrate segment 102 a, e.g. by an (e.g. hydrophilic)material (also referred to as adhesion material) from which the adhesionlayer 304 is intended to be formed being arranged above the firstsubstrate segment 102 a. Arranging the (e.g. dielectric) adhesionmaterial can be carried out by means of a coating process, e.g. by meansof chemical vapor deposition (CVD) or physical vapor deposition (PVD).The adhesion material may include or be formed from an oxide and/or adielectric, e.g. a semiconductor oxide, e.g. silicon oxide.

Alternatively, in order to form the adhesion layer 304, a part of thesubstrate 102 on the first main processing side 102 o can be chemicallyaltered, e.g. converted (e.g. oxidized), wherein the adhesion layer 304is formed from the chemically altered material of the substrate 102(e.g. an oxide).

By way of example, the adhesion layer 304 may include or be formed froman oxide (e.g. of the semiconductor material of the substrate 102), e.g.a semiconductor oxide such as silicon oxide (SiO_(2-x), where 2>x≥0).

By way of example, securing, in 300 a, can be carried out by means ofthe adhesion layer 304, e.g. by heating the adhesion layer. To that end,the adhesion layer 304 can be brought into physical contact with theadditional substrate. By way of example, the adhesion layer 304 can bein physical contact with the first substrate segment 102 a.

Optionally, the method may include, in 300 b: altering a chemicalcomposition of the first substrate segment 102 a, which is secured onthe second substrate 302, by means of the second ion implantation 204(also referred to as doping of the first substrate segment 102 a). Thesecond ion implantation 204 can be configured as in 200 c.

FIG. 4A, FIG. 4B and FIG. 4C illustrate in each case a method inaccordance with various embodiments in a schematic side view orcross-sectional view (e.g. with the viewing direction along a mainprocessing side 102 o).

Forming the micromechanical structure 106 may include, in 400 a:exposing (e.g. mechanically exposing) at least one section 404 (alsoreferred to as freely suspended section 404) of the first substratepiece 102 a, e.g. by removing a part of the second substrate 302 and/orby removing a remaining residue of the adhesion layer 304, e.g. in eachcase on mutually opposite sides. Exposing may include forming an opening302 o, e.g. a through opening 302 o (i.e. an opening 302 o extendingthrough the substrate), in the second substrate 302. The opening 302 ocan for example include or be formed from a cavity of the secondsubstrate 302.

By way of example, the micromechanical structure 106 may include anelectrode having the substrate piece 102 a, as will be described in evengreater detail below. Alternatively or additionally, the micromechanicalstructure 106 may include a membrane including the substrate piece 102a, as will be described in even greater detail below.

The micromechanical structure 106, e.g. its first substrate piece 102 a,may include a first section 402 (also referred to as suspension section402 or securing section 402) and a second section 404 (also referred toas freely suspended section 404) (e.g. adjoining the latter). The freelysuspended section 404 can be secured (e.g. suspended) on the secondsubstrate 302 by means of the securing section 402.

The freely suspended section 404 can be exposed for example on mutuallyopposite sides (e.g. on the side facing the second substrate 302 and theside correspondingly facing away from the latter).

The freely suspended section 404 may include or be formed from a sectionof the first substrate piece 102 a (e.g. the monocrystalline partialregion 104 a thereof). Alternatively or additionally, the securingsection 402 may include or be formed from a section of the firstsubstrate piece 102 a (the monocrystalline partial region 104 athereof). By way of example, the first substrate piece 102 a (e.g. themonocrystalline partial region 104 a thereof) can extend from thesuspension of the micromechanical structure 106 right into the freelysuspended part of the micromechanical structure 106.

By way of example, the freely suspended section 404 and the securingsection 402 can be connected to one another monolithically (e.g. in amonocrystalline fashion).

By way of example, the freely suspended section 404 (e.g. in the case ofa membrane 408) can have a thickness 404 d of less than approximately 1μm (micrometer), e.g. less than approximately 660 nm, and/or of morethan 10 nm (e.g. greater than approximately 50 nm, e.g. greater thanapproximately 100 nm, e.g. greater than approximately 150 nm, e.g.greater than approximately 200 nm), e.g. in a range of approximately 150nm to approximately 660 nm.

By way of example, the freely suspended section 404 (e.g. in the case ofa cantilever 410) can have a thickness 404 d of less than approximately5 μm (e.g. less than approximately 3 μm, e.g. less than approximately 1μm, e.g. less than approximately 0.5 μm) and/or of more than 10 nm (e.g.greater than approximately 50 nm, e.g. greater than approximately 100nm, e.g. greater than approximately 150 nm, e.g. greater thanapproximately 200 nm), e.g. in a range of approximately 2 μm toapproximately 4 μm, e.g. approximately 3 μm.

Forming the micromechanical structure 106 can optionally include, in 400a: thinning and/or planarizing the first substrate segment 102 a or atleast the first partial region 104 a.

Forming the micromechanical structure 106 may include, in 400 b: forminga membrane 408, which includes or is formed from the first substratesegment 102 a or at least the first partial region 104 a. The membrane408 can be configured to be deflected in a central region (also referredto as functional region) of the freely suspended section 404, which isarranged e.g. at a distance from the second substrate 302, e.g. abovethe opening 302 o. During deflection, a peripheral region of the freelysuspended section 404 (arranged on or near the second substrate 302) ofthe membrane 408 can be fixedly held (e.g. in an immobile fashion) bymeans of the securing section 402 (also referred to as support orclamp).

The membrane 408 can be understood to be a sheetlike structure element,such as a plate, which is anchored on one or more peripheral regions bymeans of a securing section 402 (for example arranged peripherallyand/or surrounding the central region). If the membrane 408 is subjectedto a mechanical loading, it diverts the load to the securing section402, on which it is fixed counter to a shear stress. The membrane 408can be carried by means of the second substrate 302.

Forming the micromechanical structure 106 may include, in 400 c: forminga cantilever 410 (e.g. a cantilever beam), which includes or is formedfrom the first substrate segment 102 a or at least the first partialregion 104 a. The cantilever 410 can be configured to be deflected in afirst end region 410 e (also referred to as functional region) of thefreely suspended section 404 (at a distance from the second substrate302), while the second end region 420 e (opposite the latter) of thefreely suspended section 404 (on or near the second substrate 302) isfixedly held (e.g. in an immobile fashion) by means of the securingsection 402. The end region 410 e of the freely suspended section 404can be separated from the second substrate 302 by means of a gap(opposite the peripheral region), e.g. in a deflectable fashion.

The cantilever 410 can be understood to be a longitudinally extendingstructure element, such as an elongate plate or a beam, which isanchored on a second end region 420 e (for example opposite the firstend region) by means of a securing section 402. In other words, thecantilever 410 may include a projecting first end region 410 e mountedon one side. If the cantilever 410 is subjected to a mechanical loading,it diverts the load to the securing section 402, on which it is fixedcounter to a shear stress. The cantilever 410 can be carried by means ofthe second substrate 302.

Forming the micromechanical structure 106 may include, in 400 a, in 400b and/or in 400 c: forming an additional layer 412 (also referred to asbase layer 412) above the first substrate segment 102 a (e.g. above thefirst section 402 and/or above the second section 404), e.g. by means ofPVD or CVD. The base layer 412 and the first substrate segment 102 a candiffer from one another, e.g. in their semiconductor material and/or intheir crystallization type. The base layer 412 can be polycrystallineand/or include or be formed from Si.

By way of example, after the severing of the substrate 102, and optionalplanarization and structuring of the first substrate segment 102 a (e.g.including or formed from an SiC layer), a deposition of poly-Si(polycrystalline silicon) can be carried out, which subsequently servesas a functional membrane 408 or cantilever 410. By way of example, thefirst substrate segment 102 a (e.g. including or formed from SiC) canprovide a supporting/stabilizing structure (also referred to asstiffening structure) in order to increase the robustness of the poly-Simembrane. Optionally, the first substrate segment 102 a can bestructured.

In general, the micromechanical structure 106 may include a functionalstructure 544, e.g. the membrane 408 and/or the cantilever 410. Thefunctional structure 544 may include the anchored section 402 and thecantilevered section 404, which can be (e.g. monolithically)monocrystalline and/or can be formed by means of processing of themonocrystalline substrate piece 102 a.

FIG. 5A, FIG. 5B, FIG. 5C and FIG. 5D illustrate in each case a methodin accordance with various embodiments in a schematic side view orcross-sectional view (e.g. with the viewing direction along a mainprocessing side 102 o).

Forming the micromechanical structure 106 may include, in 500 a:providing the second substrate 302, which has an electrode 502. Theelectrode 502 (also referred to as first electrode 502) can be formedbefore the first substrate 102 and the second substrate 302 are securedon one another (also referred to as preprocessing of the secondsubstrate 302).

The first electrode 502 can have for example a thickness (verticalextent) of less than approximately 2 μm, e.g. less than approximately 1μm, e.g. greater than or equal to approximately 600 nm, e.g. if thefirst electrode 502 includes or is formed from a polycrystallinematerial (e.g. polysilicon or nitride).

If the first electrode 502 is formed from a substrate segment (as willbe described below), e.g. from monocrystalline material (e.g. SiC), thefirst electrode 502 can be made thinner, e.g. having a thickness(vertical extent) of less than approximately 600 nm, e.g. less thanapproximately 300 nm, e.g. less than or equal to approximately 150 nm,e.g. greater than or equal to approximately 100 nm.

Forming the micromechanical structure 106 may include, in 500 b: formingan additional electrode 512 (also referred to as second electrode 512),which includes or is formed from the first substrate segment 102 a or atleast the first partial region 104 a. The second electrode 512 can havefor example a smaller thickness (vertical extent) than the firstelectrode 502 (e.g. if the second electrode 512 includes moremonocrystalline material than the first electrode 502).

In general, the micromechanical structure 106 may include an electroniccomponent 502, 512 (also referred to as micromechanical structure 106),e.g. the first electrode 502 and/or the second electrode 512.Analogously to the functional structure 544, the electronic (active)structure element 502, 512 may include an anchored section 402 and thecantilevered section 404, which can be (e.g. monolithically)monocrystalline and/or can be formed by means of processing of themonocrystalline substrate piece 102 a. The electronic structure element502, 512 can have a greater stiffness than the functional structure 544.The stiffness can be understood as resistance of a structure to elasticdeformation as a result of a force or a torque (bending moment ortorsional moment, depending on stress). The electronic (active)structure element 502, 512 can transmit an electrical signal duringoperation of the micromechanical structure 106.

Forming the second electrode 512 may include: forming a cavity 302 h(also referred to as first cavity 302 h) between the substrate segment102 a and the first electrode 502, e.g. by removing a material (e.g. asacrificial material) between the substrate segment 102 a and the firstelectrode 502.

Forming the cavity 302 h can be carried out for example after arrangingthe first substrate segment 102 a and/or forming the first electrode502. By way of example, a sacrificial layer can be arranged between thefirst electrode 502 and the first substrate segment 102 a, saidsacrificial layer being removed in order to form the cavity 302 h, e.g.by means of the sacrificial layer being etched free/out. Alternativelyor additionally, the sacrificial layer can serve for exactly setting thevertical distances between membrane and electrode(s).

Alternatively, the cavity 302 h can be formed before the first substratesegment 102 a is arranged above the first electrode 502, i.e.illustratively in a floating fashion (above the cavity 302 h).

The second electrode 512 can have for example a thickness (verticalextent) smaller than the first electrode 502 and/or of less than 600 nm,e.g. less than or equal to approximately 300 nm, e.g. less than or equalto approximately 150 nm, e.g. in a range of approximately 100 nm toapproximately 400 nm. By way of example, the second electrode 512, usingthe monocrystalline material (e.g. SiC), can be made thinner than thefirst electrode 502 (which can have a thickness for example in a rangeof approximately 610 nm to approximately 2000 nm).

The first substrate segment 102 a or its first partial region 104 a canspatially straddle the cavity 302 h.

Forming the micromechanical structure 106 may include, in 500 c: forminga functional structure 544 (e.g. providing a membrane 408 or acantilever 410) including the first substrate segment 102 a or at leastthe first partial region 104 a. Forming the functional structure 544 mayinclude: forming a first cavity 302 h between the substrate segment 102a and the first electrode. The functional structure 544 can have afunctional region, which is deflectable relative to the second substrate302 (e.g. into the first cavity 302 h) as a reaction to a force actingthereon. The first substrate segment 102 a or its first partial region104 a can spatially straddle the first cavity 302 h.

Forming the micromechanical structure 106 may include, in 500 d: formingthe second electrode 512, wherein the functional structure 544 isarranged between the second electrode 512 and the first electrode 502.The functional structure 544 may include the first substrate segment 102a or at least the first partial region 104 a or can be formed thereon(or at least from a part thereof). Forming the functional structure 544may include: forming a first cavity 302 h between the substrate segment102 a and the first electrode 502 and/or forming a second cavity 312 hbetween the substrate segment 102 a and the second electrode 512.

Forming the second cavity 312 h can be carried out for example afterarranging the first substrate segment 102 a and/or forming the firstelectrode 502 and/or the second electrode 512. By way of example, asacrificial layer can be arranged between the second electrode 512 andthe first substrate segment 102 a, said sacrificial layer being removedin order to form the second cavity 312 h, e.g. by means of thesacrificial layer being etched free/out. Alternatively or additionally,the sacrificial layer can serve for exactly setting the verticaldistances between membrane and electrode(s).

Alternatively, the second cavity 312 h can be formed before the secondelectrode 512 is arranged above the first substrate segment 102 a, i.e.illustratively in a floating fashion (above the second cavity 312 h).

Alternatively, the substrate segment 102 a can be used for forming thesecond electrode 512.

The first substrate segment 102 a or its first partial region 104 a canspatially straddle the first cavity 302 h and/or the second cavity 312h.

The substrate segment 102 a arranged between the two electrodes 502, 512can provide for example the membrane 408 or the cantilever 410.Optionally, a second substrate segment 102 b can be used for forming thesecond electrode 512, as will be described in even greater detail below.

FIG. 6A, FIG. 6B and FIG. 6C illustrate in each case a method inaccordance with various embodiments in a schematic side view orcross-sectional view (e.g. with the viewing direction along a mainprocessing side 102 o)

Providing the substrate 102 may include, in 600 a: structuring the firstsubstrate segment 102 a (and optionally the adhesion layer 304), e.g.after forming the desired separating layer 202. By way of example,structuring the first substrate segment 102 a may include exposing atleast one or a plurality of regions of the desired separating layer 202.Alternatively or additionally, structuring the first substrate segment102 a may include forming one or a plurality of openings in thesubstrate segment 102 a which for example penetrate through thesubstrate segment 102 a.

Structuring the first substrate segment 102 a can be carried out bymeans of etching, e.g. by means of wet-chemical etching, dry etching(e.g. plasma etching or sputter etching) and/or by means of ion etching.Alternatively or additionally, structuring the first substrate segment102 a can be carried out by means of a mask (e.g. the mask formed bymeans of photolithography process). The photolithography process mayinclude for example: applying a hard mask (e.g. including or formed fromphotoresist) over the first substrate segment 102 a; and structuring thefirst substrate segment 102 a by means of etching the first substratesegment 102 a. Alternatively, a maskless structuring process can beused, e.g. a laser structuring process (e.g. a CNC laser process, i.e. acomputer-aided numerically controlled laser process).

Forming the micromechanical structure 106 may include, in 600 b: forminga stiffening structure 602 (e.g. including struts, strips or rings),which includes or is formed from the (e.g. structured) first substratesegment 102 a or at least the first partial region 104 a. The stiffeningstructure 602 can be arranged above a deflectable region (e.g. thefreely suspended section), e.g. above a membrane 408 or a cantilever410. By way of example, the second substrate 302 may include afunctional structure 544 before it is connected to the first substrate102. Alternatively, the deflectable region can be deposited on or abovethe stiffening structure 602, e.g. including or formed frompolycrystalline silicon (also referred to as poly-Si).

In accordance with various embodiments, the deflectable region can bearranged between the stiffening structure 602 and the cavity 302 h.Alternatively or additionally, the or an additional stiffening structure602 can be arranged between the cavity 302 h and the deflectable region,e.g. in a manner adjoining the cavity 302 h.

Alternatively, the deflectable region (e.g. a membrane 408 or acantilever 410) may include or be formed from the monocrystallinesemiconductor material and the stiffening structure 602 may include orbe formed from a polycrystalline semiconductor material, e.g. poly-Si.By way of example, the stiffening structure 602 can be deposited on orabove the deflectable region, e.g. including or formed frompolycrystalline silicon (also referred to as poly-Si).

The stiffening structure 602 can have a greater mechanical hardness, agreater stiffness or a greater modulus of elasticity than the functionalstructure 544. The stiffness of the stiffening structure 602 can bealtered by means of the structuring of the first substrate segment 102a. Structuring the first substrate segment 102 a can be carried outbefore or after arranging above the deflectable structure 408, 410.

Forming the micromechanical structure 106 may include, in 600 c: forminga stiffening structure 602, which includes or is formed from the (e.g.structured) first substrate segment 102 a or at least the first partialregion 104 a, between the first electrode 502 and the second electrode512. The stiffening structure 602 can be arranged above a functionalstructure, e.g. above a membrane 408 or a cantilever 410.

FIG. 7A and FIG. 7B illustrate in each case a method in accordance withvarious embodiments in a schematic side view or cross-sectional view(e.g. with the viewing direction along a main processing side 102 o).

Providing the substrate 102 may include, in 700 a: forming the desiredseparating layer 202 by means of ion implantation 204 through the firstsubstrate segment 102 a and through the adhesion layer 304.Alternatively or additionally, the method may include, in 700 a:altering a chemical composition of the first substrate segment 102 a bymeans of ion implantation 204, e.g. the second ion implantation 204.Optionally, the first ion implantation 204 can be carried out beforehand(e.g. for forming the separating layer 202). Alternatively oradditionally, the first ion implantation 204 and the second ionimplantation 204 can differ, e.g. in at least the implanted materialand/or the implantation depth of the implantation energy.

Optionally, the method may include, in 700 a: structuring the firstsubstrate segment 102 a. The material properties of a stiffeningstructure formed therefore later, if appropriate, can thus be adapted.

The (e.g. hydrophilic) adhesion layer 304 can for example include or beformed from an (e.g. hydrophilic) dielectric, e.g. an oxide (alsoreferred to as oxide layer 304), e.g. a semiconductor oxide.

By way of example, the substrate 102 can be a monocrystalline siliconcarbide substrate 102 (SiC substrate 102) or include at least one SiCsingle-crystal region 104.

By way of example, the desired separating layer 202 can be formed bymeans of implantation 204 of hydrogen ions (e.g. using hydrogen gas—H₂).

Securing the first substrate 102 (also referred to as carrier substrate)on the second substrate 302 may include, in 700 b: bonding 702 thesubstrate 102 onto the additional substrate 302. The additionalsubstrate 302 can be provided (e.g. be preprocessed, also referred to aspreprocessing) in such a way that it has a first electrode 502. Thefirst electrode 502 can be provided for example in a preconfiguredfashion.

The second substrate 302 may include for example an electrode ply 704including the first electrode 502. The electrode ply 704 may include an(e.g. hydrophilic) adhesion material, e.g. an (e.g. hydrophilic)dielectric (e.g. an oxide), into which the first electrode 502 isembedded. The first electrode 502 may include a plurality of layers, ofwhich a first layer 502 a may include or be formed from a nitride, asecond layer 502 b may include or be formed from a semiconductormaterial (e.g. Si or SiC), a third layer 502 c may include or be formedfrom a nitride, and a fourth layer 502 d may include or be formed from aplurality of projections, e.g. including or formed from a semiconductormaterial (e.g. Si, e.g. poly-Si). Optionally, the first electrode mayinclude a plurality of openings (ventilation openings) that penetratethrough the plurality of layers of the first electrode 502.

The second substrate 302 (also referred to as target substrate) mayinclude a substrate body 706, above which the first electrode 502 or theelectrode ply 704 is arranged. Optionally, an insulation layer 302 p,e.g. including or formed from an oxide, can be arranged between thesubstrate body 706 and the first electrode 502 or the electrode ply 704.The substrate body 706 may include or be formed from a or thesemiconductor material, e.g. Si.

By way of example, an SiC carrier substrate 102, in 700 a, can beprovided with a superficial oxide layer 304 and subsequently be broughtinto contact with an already preprocessed target substrate 302 in 700 b.Connecting the two substrates 102, 302 to one another can be carried outby means of a bonding process, e.g. by means of a molecular(hydrophilic) bonding process (i.e. molecular adhesion optionallyreinforced by a thermal treatment).

Optionally, the first electrode 502 (e.g. the second layer 502 b) mayinclude a monocrystalline substrate segment or be formed therefrom (orat least from a part thereof), as will be described in even greaterdetail below (cf. 1200 b).

FIG. 8A and FIG. 8B illustrate in each case a method in accordance withvarious embodiments in a schematic side view or cross-sectional view(e.g. with the viewing direction along a main processing side 102 o).

Severing the first substrate 102 may include, in 800 a: thermallyprocessing the first substrate 102, e.g. by thermal energy being fed tothe first substrate 102. The thermal processing may include: heating thefirst substrate 102, e.g. to at least a temperature up to which thedesired separating layer 202 is thermally stable and/or to at leastapproximately 700° C., e.g. to at least approximately 900° C. By meansof the thermal processing of the first substrate 102, a structuralalteration of the first substrate 102 can be brought about, e.g. in thedesired separating layer 202. The structural alteration can bring abouta cancelation of the connection of the two substrate segments 102 a, 102b with respect to one another.

By way of example, in 800 a, by means of a thermal treatment of thecomposite system including the first substrate 102 and the secondsubstrate 302 (e.g. approximately 1 hour at approximately 500-900° C.),the layer stack 102 a, 304 (e.g. SiO₂—SiC) can be separated from the SiCcarrier substrate 102 in accordance with the predefined desiredseparating layer 202 a (also referred to as splitting zone 202). The SiCcarrier substrate can subsequently be reused (e.g. recycled) and servefor forming further sensors at the wafer level, as will be described ineven greater detail below.

Severing the first substrate 102 may include, in 800 b: removing thesecond substrate segment 102 b from the first substrate segment 102 a.By way of example, the first substrate segment 102 a can be at leastpartly exposed in 800 b.

Optionally, after severing in 800 b altering the first substrate segment102 a can be carried out, e.g. chemically or structuring altering thefirst substrate segment 102 a, e.g. structuring or altering the chemicalcomposition of the first substrate segment 102 a. Altering the chemicalcomposition of the first substrate segment 102 a can be carried out forexample by means of the second ion implantation 204. The first ionimplantation 204 can optionally be carried out beforehand (e.g. forforming the separating layer 202). Alternatively or additionally, thefirst ion implantation 204 and the second ion implantation 204 candiffer, e.g. in at least the implanted material and/or the implantationdepth of the implantation energy.

The structuring can be carried out for example by means of a lithographyprocess and/or by means of plasma etching. The structuring may includefor example: applying a hard mask (e.g. including or formed fromphotoresist, but with the first substrate segment 102 a; and structuringthe first substrate segment 102 a by means of etching the firstsubstrate segment 102 a. Alternatively, a maskless structuring processcan be used, e.g. a laser structuring process (e.g. a CNC laser process,i.e. a computer-aided numerically controlled laser process).

By means of altering the chemical composition of the first substratesegment 102 a, it is possible to alter a modulus of elasticity and/or amechanical hardness of the first substrate segment 102 a, e.g. to reducethe modulus of elasticity and/or to reduce the mechanical hardness. Bymeans of the structuring of the first substrate segment 102 a, amechanical stiffness of the first substrate segment 102 a can bealtered, e.g. reduced.

The monocrystalline layer 102 a (e.g. a SiC layer 102 a) (illustrativelycleaved in a defined manner) remains connected to the target substrate304 by means of the insulator layer 304 (e.g. including or formed froman oxide) and can for example later provide a membrane of a sensor. Anoptional alteration of the monocrystalline layer 102 a (and thus of themembrane properties) can be carried out in 800 b, e.g. by means of animplantation of nitride (N₂). If the monocrystalline layer 102 a (e.g.SiC layer 102 a) has a roughness greater than a stipulation on accountof the severing (cleaving), smoothing (planarization) can be carried outbefore the deposition of further layers on the monocrystalline layer 102a (e.g. by means of a chemical mechanical processing (also referred toas CMP process).

FIG. 9A and FIG. 9B illustrate in each case a method in accordance withvarious embodiments in a schematic side view or cross-sectional view(e.g. with the viewing direction along a main processing side 102 o).

Forming the micromechanical structure 106 may include, in 900 a:electrically contacting the first electrode 502 and/or the firstsubstrate segment 102 a. By way of example, the first electrode 502and/or the first substrate segment 102 a can be connected to anelectrical contact pad 902, e.g. by means of electrical lines (e.g.including plated-through holes), which may include or be formed from ametal. The electrical contact pads can be provided for example by meansof a metallization 902. The metallization 902 can be electricallycoupled (i.e. electrically conductively connected) for example by meansof plated-through holes in each case to the first electrode 502, thesubstrate body 706 and/or the first substrate segment 102 a. Themetallization 902 and/or the electrical lines can be electricallyconductive, i.e. have an electrical conductivity of more thanapproximately 10⁶ siemens/meter. The metallization and/or the electricallines may include or be formed from a metal, e.g. a cohesion-resistantmetal (e.g. noble metal) such as molybdenum, tungsten and/or gold, orelse some other metal such as copper and/or aluminum. Alternatively oradditionally, the metallization 902 may include or be formed from anitride (e.g. tantalum nitride) (can likewise be corrosion-resistant).

Forming the micromechanical structure 106 can optionally include, in 900a: forming one or a plurality of layers above the first substratesegment 102 a, of which at least one first layer 904 may include or beformed from a dielectric (e.g. an oxide) and/or of which at least onesecond layer 902 (e.g. a metallization 902) may include or be formedfrom a metal, and of which optionally at least one third layer 906 mayinclude or be formed from a passivation material (also referred to aspassivation layer 906). The passivation layer 906 may include forexample a plurality of openings (also referred to as contact openings),of which each opening exposes a contact pad of the metallization 902.The contact openings can be formed for example by means of an etchingprocess and/or by means of a lithography process. The passivationmaterial can be electrically insulating, i.e. have an electricalconductivity in a range of less than approximately 10⁻⁶ siemens/meter.By way of example, the passivation material can be an oxide (e.g. asemiconductor oxide), polymer (e.g. a resin or lacquer) or nitride (e.g.a semiconductor nitride).

Forming the micromechanical structure 106 can optionally include, in 900a: forming an opening 906 o (first opening 906 o) above the firstsubstrate segment 102 a, e.g. in the passivation layer 906.

Forming the micromechanical structure 106 may include, in 900 b:thinning the additional substrate 302 and/or forming an opening 706 o(second opening 706 o) in the additional substrate 302. Thinning and/orforming the second opening 706 o can be carried out from an oppositeside of the additional substrate 302 relative to the first substratesegment 102 a. The opening 706 o can extend through the substrate body706, for example. Forming the opening 706 o in the additional substrate302 can stop for example at the insulation layer 302 p. By way ofexample, the insulation layer 302 p can be used as an etch stop.

FIG. 10 illustrate in each case a method in accordance with variousembodiments in a schematic side view or cross-sectional view (e.g. withthe viewing direction along a main processing side 102 o).

Forming the micromechanical structure 106 may include, in 1000: exposing(e.g. mechanically freeing) the first electrode 502 and/or the firstsubstrate segment 102 a (at least in the second section 404), e.g. ineach case on mutually opposite sides. Exposing can be carried out byenlarging the first opening 906 o and/or the second opening 706 o. Bymeans of the exposing, it is possible to form a cavity 302 h (i.e. asection of the second opening 706 o) between the first electrode 502 andthe first substrate segment 102 a. The vertical extent of the cavity 302h can be defined by means of the thickness of the electrode ply 704.

The first substrate segment 102 a (e.g. its second section 404) can becoupled to the additional substrate 302 by means of the suspensionsection 402. Alternatively or additionally, the first substrate segment102 a (e.g. its second section 404) can be electrically contacted bymeans of the suspension section 402.

The freely suspended section 404 can be exposed by means of the firstopening 906 o and/or by means of the second opening 706 o and/orseparate them from one another.

The micromechanical structure 106 (e.g. a capacitive sensor) illustratedin FIG. 10 can be provided for example in a single-electrodeconfiguration (also referred to as single-counterelectrodeconfiguration; by way of example, the membrane can be regarded aselectrode to counterelectrode). The single-electrode configuration mayinclude a functional region 404, which is deflectable relative to theadditional substrate 302 (e.g. into the first cavity 302 h) as areaction to a force acting thereon, and exactly one first electrode 502.The first electrode 502 and the functional region 404 can becapacitively coupled to one another. The first electrode 502 can bearranged between the functional region 404 and the substrate body 706(also referred to as bottom single-electrode configuration or bottomsingle-counterelectrode configuration). The first substrate segment 102a can provide for example the membrane 408 or the cantilever 410.

FIG. 11A and FIG. 11B illustrate in each case a method in accordancewith various embodiments in a schematic side view or cross-sectionalview (e.g. with the viewing direction along a main processing side 102o).

Providing the first substrate 102 in 1100 a can be configured as in 700a.

Securing the first substrate 102 on the second substrate 302 in 1100 bcan be configured as in 700 b, except that the electrode of the secondsubstrate 302 is omitted. The second substrate 302 in 1100 b may includean additional (e.g. hydrophilic) adhesion layer 1104, which may includeor be formed from the adhesion material and/or is in physical contactwith the substrate body 706. The (e.g. dielectric) adhesion material mayinclude or be formed from an oxide and/or a dielectric, e.g. asemiconductor oxide, e.g. silicon oxide.

FIG. 12A and FIG. 12B illustrate in each case a method in accordancewith various embodiments in a schematic side view or cross-sectionalview (e.g. with the viewing direction along a main processing side 102o).

Severing the first substrate 102 in 1200 a can be configured as in 800 a(except that the second substrate 302 has no electrode). The optionalaltering of the first substrate segment 102 a in 1200 b can beconfigured as in 800 b.

In accordance with various embodiments, in 1200 b, forming a firstelectrode 502 can be carried out, which first electrode (e.g. the secondlayer 502 b thereof) includes or is formed from the first substratesegment 102 a (also referred to as preprocessing of the second substrate302). In that case, it is possible to continue with method step 800 a.

Therefore, alternatively, provision can be made for forming a functionalstructure 544, which includes or is formed from the first substratesegment 102 a. In that case, it is possible to continue with method step1300 a.

FIG. 13A and FIG. 13B illustrate in each case a method in accordancewith various embodiments in a schematic side view or cross-sectionalview (e.g. with the viewing direction along a main processing side 102o).

Forming the micromechanical structure 106 may include, in 1300 a:forming the second electrode 512 above the first substrate segment 102a.

The second electrode 512 may include a plurality of layers, of which afirst layer 512 a may include or be formed from a nitride, a secondlayer 512 a may include or be formed from a semiconductor material (e.g.Si, e.g. poly-Si), a third layer 512 c may include or be formed from anitride, and a fourth layer may include or be formed from a plurality ofprojections, e.g. including or formed from a semiconductor material(e.g. Si, e.g. poly-Si). Optionally, the second electrode 512 mayinclude a plurality of openings (ventilation openings) that penetratethrough the plurality of layers of the second electrode 512.

Forming the micromechanical structure 106 may include, in 1300 a:electrically contacting the second electrode 512 and/or the firstsubstrate segment 102 a. By way of example, the second electrode 512and/or the first substrate segment 102 a can be connected to anelectrical contact pad 902, e.g. by means of electrical lines (e.g.including plated-through holes), which may include or be formed from ametal. The electrical contact pads can be provided for example by meansof a metallization 902. The metallization 902 can be electricallycoupled (i.e. electrically conductively connected) for example by meansof plated-through holes in each case to the second electrode 512, thesubstrate body 706 and/or the first substrate segment 102 a. Themetallization 902 and/or the electrical lines can be electricallyconductive, i.e. have an electrical conductivity of more thanapproximately 10⁶ siemens/meter. The metallization 902 and/or theelectrical lines may include or be formed from a metal, e.g. acohesion-resistant metal (e.g. noble metal) such as molybdenum, tungstenand/or gold, or else some other metal such as copper and/or aluminum.Alternatively or additionally, the metallization 902 may include or beformed from a nitride (e.g. tantalum nitride) (can likewise becorrosion-resistant).

Forming the micromechanical structure 106 can optionally include, in1300 a: forming one or a plurality of layers above the first substratesegment 102 a, of which at least one layer 904 may include or be formedfrom an oxide and/or of which at least one layer 902 may include beformed from a metallization 902, and of which optionally at least onelayer 906 may include or be formed from a passivation material. Thepassivation layer 906 may include for example a plurality of openings,of which each opening exposes a contact pad of the metallization 902.The passivation material can be electrically insulating, i.e. have anelectrical conductivity of less than approximately 10⁻⁶ siemens/meter.By way of example, the passivation material can be an oxide (e.g. asemiconductor oxide), polymer (e.g. a resin or lacquer) or nitride (e.g.a semiconductor nitride).

Forming the micromechanical structure 106 can optionally include, in1300 a: forming a first opening 906 o above the first substrate segment102 a and/or above the second electrode, e.g. in the passivation layer906.

Forming the second electrode 512 can optionally include, in 1300 a:forming the second electrode 512 (e.g. the second layer 512 b thereof),which includes or is formed from a second monocrystalline substratesegment 102 b. By way of example, the second monocrystalline substratesegment 102 b can be provided by means of severing the substrateremainder.

Forming the micromechanical structure 106 may include, in 1300 b:thinning the additional substrate 302 and/or forming a second opening706 o in the additional substrate 302. Thinning and/or forming thesecond opening 706 o can be carried out from an opposite side of theadditional substrate 302 relative to the first substrate segment 102 a.The opening 706 o can extend for example through the substrate body 706.Forming the opening 706 o in the additional substrate 302 can stop forexample at the additional adhesion layer 1104. By way of example, theadditional adhesion layer 1104 can be used as an etch stop.

FIG. 14 illustrate in each case a method in accordance with variousembodiments in a schematic side view or cross-sectional view (e.g. withthe viewing direction along a main processing side 102 o).

Forming the micromechanical structure 106 may include, in 1400: exposing(e.g. mechanically freeing) the second electrode 512 and/or the firstsubstrate segment 102 a. The exposing can be carried out by enlargingthe first opening 906 o and/or the second opening 706 o, e.g. onmutually opposite sides. By means of the exposing, a cavity 312 h (i.e.a section of the first opening 906 o) can be formed between the secondelectrode 512 and the first substrate segment 102 a.

The first substrate segment 102 a can be coupled to the additionalsubstrate 302 by means of the suspension section 402. Alternatively oradditionally, the first substrate segment 102 a can be electricallycontacted by means of the suspension section 402.

The freely suspended section 404 can be exposed by means of the firstopening 906 o and/or by means of the second opening 706 o and/orseparate them from one another.

The micromechanical structure 106 (e.g. a capacitive sensor) illustratedin FIG. 14 can be provided for example in a single-electrodeconfiguration (also referred to as single-counterelectrodeconfiguration). The single-electrode configuration may include afunctional region 404, which is deflectable relative to the additionalsubstrate 302 as a reaction to a force acting thereon, and exactly onesecond electrode 512. The second electrode 512 and the functional region404 can be capacitively coupled to one another. The functional region404 can be arranged between the second electrode 512 and the substratebody 706 (also referred to as top single-electrode configuration or topsingle-counterelectrode configuration).

The substrate segment 102 a arranged between the second electrode 512and the substrate body 706 can provide for example the membrane 408 orthe cantilever 410. Alternatively, the first substrate segment 102 a canbe used for forming the second electrode 512. By way of example, thesecond layer 512 b of the second electrode 512 may include the firstsubstrate segment 102 a or be formed therefrom (or at least from a partthereof).

Optionally, a second substrate segment 102 b can be used for forming thesecond electrode 512. By way of example, the second layer 512 b of thesecond electrode 512 may include the second substrate segment 102 b orbe formed therefrom (or at least from a part thereof).

FIG. 15A and FIG. 15B illustrate in each case a method in accordancewith various embodiments in a schematic side view or cross-sectionalview (e.g. with the viewing direction along a main processing side 102o).

Forming the micromechanical structure 106 may include, in 1500 a:providing the first substrate segment 102 a and/or the second substrate302, e.g. configured as in 800 a and/or in 800 b.

Forming the micromechanical structure 106 may include, in 1500 a:forming the second electrode 512 above the first substrate segment 102a, e.g. configured like 1300 a.

Forming the micromechanical structure 106 may include, in 1500 b:thinning the additional substrate 302 and/or forming an opening 706 o(second opening 706 o), in the additional substrate 302. Thinning and/orforming the second opening 706 o can be carried out from an oppositeside of the additional substrate 302 relative to the first substratesegment 102 a. The opening 706 o can extend for example through thesubstrate body 706. Forming the opening 706 o in the additionalsubstrate 302 can stop for example at the insulation layer 302 p. By wayof example, the insulation layer 302 p can be used as an etch stop.

The metallization 902 (e.g. including contact pads) can be electricallycoupled (i.e. electrically conductively connected) for example by meansof plated-through holes in each case to the first electrode 502, thesecond electrode 512, the substrate body 706 and/or the first substratesegment 102 a. The metallization 902 and/or the electrical lines can beelectrically conductive, i.e. have an electrical conductivity of morethan approximately 10⁶ siemens/meter. The metallization 902 and/or theelectrical lines may include or be formed from a metal, e.g. copperand/or aluminum.

FIG. 16 illustrate in each case a method in accordance with variousembodiments in a schematic side view or cross-sectional view (e.g. withthe viewing direction along a main processing side 102 o).

Forming the micromechanical structure 106 may include, in 1600: exposing(e.g. mechanically freeing) the first electrode 502, the secondelectrode 512 and/or the first substrate segment 102 a. Exposing can becarried out by enlarging the first opening 906 o and/or the secondopening 706 o, e.g. in each case on mutually opposite sides. By means ofthe exposing, the first cavity 302 h (i.e. a section of the secondopening 706 o) can be formed between the first electrode 502 and thefirst substrate segment 102 a. By means of the exposing, a second cavity312 h (i.e. a section of the first opening 906 o) can be formed betweenthe second electrode 512 and the first substrate segment 102 a.

The first substrate segment 102 a can be coupled to the additionalsubstrate 302 by means of the suspension section 402. Alternatively oradditionally, the first substrate segment 102 a can be electricallycontacted by means of the suspension section 402.

The freely suspended section 404 can be exposed by means of the firstopening 906 o and/or by means of the second opening 706 o and/orseparate them from one another.

The micromechanical structure 106 (e.g. a capacitive sensor) illustratedin FIG. 16 can be provided for example in a double-electrodeconfiguration (also referred to as dual-counterelectrode configuration).The double-electrode configuration may include a functional region 404,which is deflectable relative to the additional substrate 302 as areaction to a force acting thereon, and exactly two electrodes 502, 512,between which the functional region 404 is arranged. The first electrode502, the second electrode 512 and the functional region 404 can becapacitively coupled to one another.

The substrate segment 102 a arranged between the two electrodes 502, 512can provide for example the membrane 408 or the cantilever 410.Optionally, a second substrate segment 102 b can be used for forming thefirst electrode 502 or the second electrode 512. Alternatively, thesubstrate segment 102 a can be used for forming the first electrode 502or the second electrode 512.

In accordance with various embodiments, a double-electrode configurationcan be provided, in which at least one electrode 502, 512 and/or thefunctional region 404 may include or be formed from a monocrystallinematerial, e.g. monocrystalline GaN, monocrystalline SiC and/ormonocrystalline Si.

The double-electrode configuration can provide for example a sensor(e.g. a microphone). In comparison with the single-electrodeconfiguration, the double-electrode configuration can have a greater SNRand/or a lower THD. The production of the double-electrode configurationcan be carried out for example analogously to that of the topsingle-electrode configuration and differ therefrom in that the targetsubstrate 302 is preprocessed.

FIG. 17 illustrate in each case a method in accordance with variousembodiments in a schematic side view or cross-sectional view (e.g. withthe viewing direction along a main processing side 102 o).

The method may include, in 1700 a: dividing a first monocrystallinelayer 102 a from a substrate 102 by severing the substrate 102 in amonocrystalline region (wherein a substrate remainder 102 r of thesubstrate 102 remains).

The method may include, in 1700 b: forming a first micromechanicalstructure 106 including the first monocrystalline layer 102 a. The firstmonocrystalline layer 102 a can provide for example the functionalstructure 544, the stiffening structure 602, the first electrode 502 orthe second electrode 512 of the first micromechanical structure 106.

The method can optionally include, in 1700 c: providing a substrate 102,which includes or is formed from the substrate remainder 102 r.Providing can optionally include: thermally processing the substrateremainder 102 r, e.g. by annealing the latter (e.g. in order to annealthe crystal structure).

The method can optionally include, in 1701 a: dividing a secondmonocrystalline layer 102 b from the substrate 102 (i.e. from thesubstrate remainder 102 r used as substrate 102) by severing thesubstrate 102 in a monocrystalline region, wherein a substrate remainder102 r of the substrate 102 remains.

The method can optionally include, in 1700 b: forming a secondmicromechanical structure 116 including the second monocrystalline layer102 b. The second monocrystalline layer 102 b can provide for examplethe functional structure 544, the stiffening structure 602, the firstelectrode 502 or the second electrode 512 of the second micromechanicalstructure 116.

Alternatively, in 1700 d, the second monocrystalline layer 102 b can beadded to the first micromechanical structure 106. The secondmonocrystalline layer 102 b can provide for example the functionalregion, the stiffening structure 602 or the second electrode 512 of thesecond micromechanical structure 116. By way of example, the firstmonocrystalline layer 102 a can provide the functional structure 544 ofthe first micromechanical structure 106 and the second monocrystallinelayer 102 b can provide an electrode 502, 512 of the firstmicromechanical structure 106.

Providing monocrystalline layers 102 a, 102 b by means of severing theremaining substrate remainder 102 r can be carried out (also referred toas reusing the substrate) until the monocrystalline substrate 102 hasbeen consumed. The monocrystalline substrate 102 can thus be betterutilized, which reduces costs.

In accordance with various embodiments, the severing can be carried outby means of a smart cut process. Smart cut can be understood to be atechnological process which makes it possible to transfer layerscomposed of monocrystalline semiconductor material to a technicalcarrier (i.e. the second substrate) (also referred to as transferring).

By way of example, a silicon-on-insulator substrate or asilicon-carbide-on-insulator substrate can be provided, which includesthe second substrate 302 and the monocrystalline layer 102 a, 102 b.

In accordance with various embodiments, it has been recognized that theimportance of stress decoupling increases greatly in the case ofmembrane-based sensors, e.g. since the alteration of the mechanicalproperties of conventionally used material systems has already reachedits technological limit. Therefore, it is expected that loadings of theMEMS will be able to be reduced exclusively by changes to the geometryand/or the design. In order to open up further space for changes whichare reproducible cost-effectively and reliably at a low technologicallevel, other materials are thus required, the unmodified properties ofwhich already satisfy or at least almost satisfy the requirementsimposed.

In accordance with various embodiments, illustratively a micromechanicalstructure and a method for producing it are provided which open upfurther space for changes and adaptations of the mechanical properties.Illustratively, a robust membrane (e.g. for a microphone and/or pressuresensor), i.e. having a long lifetime, can be provided which satisfiesstringent requirements in respect of the sensitivity.

Illustratively, it has been recognized that a monocrystalline material(e.g. monocrystalline SiC) offers greater space for changes andadaptations. In accordance with various embodiments, silicon carbide(Sic) can be used as membrane material. Silicon carbide can provide agreat mechanical hardness, chemical resistance (inertness) and thermalresistance, i.e. material properties which make it easier to satisfy atleast some requirements without additional modifications, such that thespace for adaptations is maintained.

Conventional processes for forming SiC are restricted to the use of lowtemperatures, e.g. less than 700° C. and/or produce polycrystallinemicrostructures. The conventional production of thin deflectablemembranes composed of a monocrystalline material leads to a lowcrystalline homogeneity of the material and low homogeneity in terms ofthe thickness to which the monocrystalline material is thinned. This lowhomogeneity can result in great fluctuations in the mechanicalproperties, such that the requirements imposed fail to be achieved.Therefore, it is conventional practice to resort to polycrystallinematerials if stringent requirements in respect of the homogeneity needto be satisfied.

In accordance with various embodiments, a micromechanical structure anda method for producing it can be provided for use in power electronics.

In accordance with various embodiments, a method for producing amonocrystalline substrate may include the following: severing thesubstrate along a main processing side into at least two (i.e. aplurality, e.g. exactly two or more than two) monocrystalline substratesegments; and forming a micromechanical structure including at least one(i.e. exactly one or more than one) monocrystalline substrate segment ofthe at least two substrate segments. The substrate can optionally besecured on a carrier, which need not necessarily be monocrystalline. Theat least one substrate segment need not necessarily denote that completepart of the substrate which is separated, but rather can be partthereof.

In accordance with various embodiments, the severing can be carried outby means of a Smartcut process.

In accordance with various embodiments, the substrate and/or eachsubstrate segment of the two substrate segments may include or be formedfrom a monocrystalline semiconductor material, e.g. monocrystallinesilicon carbide (Sic), monocrystalline gallium nitride (GaN) ormonocrystalline silicon (Si).

In accordance with various embodiments, the at least one monocrystallinesubstrate segment (also referred to as first substrate segment) mayinclude a monocrystalline layer or be formed therefrom (or at least froma part thereof). Alternatively or additionally, the othermonocrystalline substrate segment (also referred to as second substratesegment) may include a monocrystalline substrate remainder or be formedtherefrom (or at least from a part thereof). The other substrate segmentneed not necessarily denote that complete substrate remainder of thesubstrate which is separated, but rather can be part thereof.

In accordance with various embodiments, the at least one monocrystallinesubstrate segment can have a smaller (e.g. vertical) extent than theother monocrystalline substrate segment.

In accordance with various embodiments, the substrate can furthermoreinclude a desired separating layer, by means of which the two substratesegments are connected to one another; wherein the severing is carriedout by cancelling a cohesion of the desired separating layer. By way ofexample, the substrate can be divided or thermally destabilized in thedesired separating layer. Alternatively or additionally, a mechanicalforce (e.g. a tensile force) can be transmitted to the desiredseparating layer, which force exceeds the breaking force of the desiredseparating layer.

In accordance with various embodiments, the method can furthermoreinclude: forming the desired separating layer by altering a chemicalcomposition (of the substrate) between the two substrate segments.

In accordance with various embodiments, a resistance of the substratebetween the two substrate segments vis-à-vis the severing can be reducedby means of the altering.

In accordance with various embodiments, the altering can be carried outby means of hydrogenating.

In accordance with various embodiments, forming the desired separatinglayer can be carried out by means of an ion implantation.

In accordance with various embodiments, introducing a first impurityinto the substrate can be carried out by means of the ion implantation(also referred to as first ion implantation).

In accordance with various embodiments, the ion implantation can becarried out through the at least one monocrystalline substrate segment.

In accordance with various embodiments, the method can furthermoreinclude: securing the at least one monocrystalline substrate segment onan additional substrate before the severing.

The monocrystalline substrate segment may include a freely suspendedsection and an anchored section (also referred to as securing section)of the micromechanical structure, wherein the freely suspended sectionis coupled to the additional substrate (e.g. secured thereon) by meansof the anchored section. By way of example, the anchored section mayinclude or be formed from at least one part of the monocrystallinesubstrate segment and the freely suspended section may include or beformed from another part of the monocrystalline substrate segment. Thefreely suspended section (illustratively a cantilever) can be exposed onmutually opposite sides and/or project from the additional substrate(also referred to as cantilevered).

In accordance with various embodiments, the securing may include bondingthe substrate and the additional substrate onto one another, e.g. bymeans of hydrophilic bonding, anodic bonding or thermal bonding.

The first substrate segment and/or the second substrate segment can havea greater mechanical hardness and/or a greater modulus of elasticitythan the additional substrate.

In accordance with various embodiments, securing can be carried out bymeans of an (e.g. ceramic and/or hydrophilic) adhesion layer arrangedbetween the at least one monocrystalline substrate segment and theadditional substrate.

In accordance with various embodiments, the securing can be carried outby heating the adhesion layer (e.g. to a temperature in a range ofapproximately 110° C. to approximately 800° C. or more).

In accordance with various embodiments, the substrate may include theadhesion layer. By way of example, the monocrystalline substrate segmentcan be arranged between the adhesion layer and the desired separatinglayer.

In accordance with various embodiments, the securing can be carried outby bringing the adhesion layer into physical contact with the additionalsubstrate.

In accordance with various embodiments, the adhesion layer can be formedby chemically altering (e.g. oxidizing) the first main processing sideof the substrate.

In accordance with various embodiments, the chemical altering mayinclude oxidizing. By way of example, the adhesion layer may include orbe formed from a native oxide layer of the substrate. In other words,the adhesion layer may include or be formed from an oxide of thesemiconductor material of the substrate.

In accordance with various embodiments, the additional substrate mayinclude an electrode (of the micromechanical structure), or theelectrode (of the micromechanical structure) can be formed by means ofthe at least one monocrystalline substrate segment. By way of example,the micromechanical structure formed may include the electrode.Optionally, the electrode may include a plurality of through openings.

The first substrate segment and/or the second substrate segment can havea greater mechanical hardness and/or a greater modulus of elasticitythan the electrode, e.g. if the latter is provided by means of theadditional substrate.

In accordance with various embodiments, forming the micromechanicalstructure can furthermore include: forming the electrode above theadditional substrate, wherein the electrode is arranged between themonocrystalline substrate segment and the additional substrate; orwherein the electrode includes or is formed from the monocrystallinesubstrate segment.

In accordance with various embodiments, forming the micromechanicalstructure may include forming a cavity between the electrode and the atleast one monocrystalline substrate segment.

In accordance with various embodiments, forming the micromechanicalstructure may include forming an additional electrode, wherein the atleast one monocrystalline substrate segment is arranged between theadditional electrode and the additional substrate; or wherein theadditional electrode includes the at least one monocrystalline substratesegment or is formed at least by means of the latter.

The first substrate segment and/or the second substrate segment can havea greater mechanical hardness and/or a greater modulus of elasticitythan the additional electrode, e.g. if the latter is formed above thefirst substrate segment.

In accordance with various embodiments, forming the electrode and/or theadditional electrode may include forming a plurality of through openingsin the electrode or additional electrode.

In accordance with various embodiments, forming the micromechanicalstructure may include forming a sensor (e.g. pressure sensor ormicrophone) or actuator (e.g. sound emitter) including themonocrystalline substrate segment.

In accordance with various embodiments, forming the micromechanicalstructure may include forming a membrane or a cantilever including theat least one monocrystalline substrate segment or formed at least bymeans of the latter.

In accordance with various embodiments, forming the micromechanicalstructure may include exposing the at least one monocrystallinesubstrate segment on opposite sides.

In accordance with various embodiments, forming the micromechanicalstructure may include electrically contacting the at least onemonocrystalline substrate segment.

In accordance with various embodiments, the method can furthermoreinclude: altering a mechanical characteristic and/or electricalcharacteristic of the at least one monocrystalline substrate segment bymeans of an ion implantation.

In accordance with various embodiments, introducing a second impurityinto the monocrystalline substrate segment can be carried out by meansof the ion implantation (also referred to as second ion implantation).The second impurity can be different than the first impurity.

In accordance with various embodiments, altering the mechanicalcharacteristic and/or electrical characteristic of the at least onemonocrystalline substrate segment can be carried out before the severingor after the severing.

In accordance with various embodiments, the method can furthermoreinclude: forming an additional micromechanical structure including theother monocrystalline substrate segment of the two substrate segments orat least one part thereof.

In accordance with various embodiments, the at least two substratesegments may include three substrate segments (e.g. of which anadditional substrate segment includes an additional monocrystallinelayer); wherein the micromechanical structure includes two substratesegments of the three substrate segments and/or wherein the methodfurthermore includes: forming the additional micromechanical structureincluding a different substrate segment of the three substrate segments.

In accordance with various embodiments, the substrate segment mayinclude at least one of the following: (e.g. monocrystalline) siliconcarbide, (e.g. monocrystalline) gallium nitride, a greater modulus ofelasticity than one of the following: polysilicon, the substrate and/orthan 200 GPa (e.g. in a range of approximately 200 GPa to approximately600 GPa), a greater mechanical hardness than one of the following:polysilicon, the substrate and/or than 20 GPa (e.g. in a range ofapproximately 20 GPa to approximately 50 GPa) and/or a larger (e.g.laterally extended) monocrystalline region than the substrate.

In accordance with various embodiments, a micromechanical structure mayinclude the following: a substrate; a functional structure arranged atthe substrate; wherein the functional structure includes a functionalregion (also referred to as deflectable region), which is deflectablerelative to the substrate as a reaction to a force acting thereon; andwherein the functional region includes or is formed from amonocrystalline semiconductor material, e.g. monocrystalline siliconcarbide (SiC), monocrystalline gallium nitride (GaN) or monocrystallinesilicon (Si).

In accordance with various embodiments, a micromechanical structure mayinclude the micromechanical structure in accordance with variousembodiments and an electrode at the substrate, wherein the functionalregion is deflectable relative to the electrode as reaction to the forceacting thereon.

In accordance with various embodiments, a micromechanical structure mayinclude the following: a substrate; a functional structure and anelectrode, which are arranged at the substrate; wherein the functionalstructure includes a functional region, which is deflectable relative tothe electrode as a reaction to a force acting thereon; and wherein theelectrode includes or is formed from a monocrystalline semiconductormaterial, e.g. monocrystalline silicon carbide (SiC), monocrystallinegallium nitride (GaN) or monocrystalline silicon (Si).

In accordance with various embodiments, the functional region can becoupled to the substrate, e.g. in direct physical contact and/or bymeans of a securing section.

In accordance with various embodiments, a micromechanical structure mayinclude the following: a substrate including a cavity; a monocrystallinesemiconductor layer (e.g. a monocrystalline substrate segment) includinga first section (also referred to as securing section) and a secondsection (also referred to as freely suspended section) (e.g. adjoiningsaid first section); wherein the second section adjoins the cavity andis coupled to the substrate by means of the first section.

In accordance with various embodiments, the first section can be at adistance from the cavity.

In accordance with various embodiments, at least one region of thesubstrate and/or the second section can be arranged between the firstsection and the cavity.

In accordance with various embodiments, the micromechanical structurecan furthermore include: a functional structure having a functionalregion, which is deflectable relative to the substrate (e.g. into thecavity) as a reaction to a force acting thereon; wherein the secondsection includes or is formed from the functional region.

In accordance with various embodiments, the micromechanical structurecan furthermore include: an electrode arranged at the substrate; afunctional structure including a functional region, which is deflectablerelative to the electrode (e.g. into the cavity) as a reaction to aforce acting thereon; and wherein the electrode includes the secondsection.

In accordance with various embodiments, the cavity can be arrangedbetween the electrode and the functional region and/or adjoin them.

In accordance with various embodiments, the second section may includeat least one of the following: silicon carbide and/or gallium nitride, agreater modulus of elasticity than the substrate; and/or a greatermechanical hardness than the substrate.

In accordance with various embodiments, the second section may includeat least one of the following: (e.g. monocrystalline) silicon carbide,(e.g. monocrystalline) gallium nitride, a greater modules of elasticitythan one of the following: polysilicon, the substrate and/or than 200GPa (e.g. in a range of approximately 200 GPa to approximately 600 GPa),a greater mechanical hardness than one of the following: polysilicon,the substrate and/or than 20 GPa (e.g. in a range of approximately 20GPa to approximately 50 GPa) and/or a larger (e.g. laterally extended)monocrystalline region than the substrate.

In accordance with various embodiments, the micromechanical structurecan furthermore include: an additional (e.g. polycrystalline)semiconductor layer (e.g. including or formed from silicon), whichdiffers from the monocrystalline semiconductor layer in terms of itsmodules of elasticity and/or in terms of its mechanical hardness;wherein the cavity is arranged between the monocrystalline semiconductorlayer and the additional semiconductor layer and/or adjoins them.

In accordance with various embodiments, an electromechanical transducermay include the following: a substrate; a micromechanical structure indouble electrode configuration (e.g. a capacitive sensor structure);wherein the microelectromechanical structure includes at least onefreely suspended section (e.g. a layer), wherein the at least one freelysuspended section may include at least one of the following: (e.g.monocrystalline) silicon carbide, (e.g. monocrystalline) galliumnitride, a greater modulus of elasticity than one of the following:polysilicon, the substrate and/or than 200 GPa (e.g. in a range ofapproximately 200 GPa to approximately 600 GPa), a greater mechanicalhardness than one of the following: polysilicon, the substrate and/orthan 20 GPa (e.g. in a range of approximately 20 GPa to approximately 50GPa) and/or a larger (e.g. laterally extended) monocrystalline regionthan the substrate.

The freely suspended section can be formed in accordance with the doubleelectrode configuration, for example as part of an electrode and/or aspart of a membrane and/or as part of a cantilever. By way of example,the double electrode configuration can provide two cavities, at leastone (e.g. both) of which adjoin the freely suspended section.Alternatively or additionally, the double electrode configuration canprovide the freely suspended section and two additional freely suspendedsections, of which at least a first freely suspended section is part ofa first electrode, a second freely suspended section is part of a secondelectrode and a third freely suspended section is part of a functionalregion and/or is arranged between the first electrode and the secondelectrode. The freely suspended section can for example adjoin a cavityof the substrate.

In accordance with various embodiments, the electromechanical transducercan furthermore include a securing section, which is monolithicallyconnected to the freely suspended section and by means of which the atleast one freely suspended section is coupled to the substrate (e.g.secured thereon).

In accordance with various embodiments, the at least one freelysuspended section may include or be formed from a substrate segment(e.g. the layer).

In accordance with various embodiments, an electromechanical transducermay include the following: a substrate; a microelectromechanicalstructure in double electrode configuration (e.g. a capacitive sensorstructure); wherein the microelectromechanical structure includes atleast one substrate segment (e.g. a layer), wherein the substratesegment can be include or be formed from (e.g. monocrystalline) siliconcarbide and/or (e.g. monocrystalline) gallium nitride.

In accordance with various embodiments, the electromechanical transducermay include two electrodes, at least one electrode of which includes oris formed from the at least one freely suspended section, e.g. the atleast one substrate segment (e.g. the layer).

In accordance with various embodiments, the electromechanical transducer(e.g. a capacitive sensor) may include at least one functional region,which is deflectable relative to the substrate as a reaction to a forceacting thereon; wherein the at least one freely suspended section, e.g.the at least one substrate segment (e.g. the layer), includes thefunctional region. Optionally, the at least one substrate segment (e.g.the layer) may include the anchored section, by means of which thefunctional region is coupled to the substrate (e.g. secured thereon).

In accordance with various embodiments, the functional region can becoupled to the substrate, e.g. in direct physical contact and/or bymeans of an anchored section (also referred to as securing section) ofthe substrate segment (e.g. of the layer).

In accordance with various embodiments, the at least one freelysuspended section, e.g. the at least one substrate segment (e.g. thelayer), may include or be formed from monocrystalline silicon carbide.

In accordance with various embodiments, a method may include thefollowing: forming a desired separating layer in a monocrystallinesubstrate; severing the substrate along (e.g. in) the desired separatinglayer, such that a monocrystalline layer is divided off from thesubstrate; and forming a micromechanical structure including themonocrystalline layer.

In accordance with various embodiments, a method may include thefollowing: forming a desired separating layer in a monocrystallinesubstrate; securing the substrate on an additional substrate; wherein asubstrate segment of the substrate is arranged between the desiredseparating layer and the additional substrate; severing the substrate inthe desired separating layer; and forming a micromechanical structureincluding at least the substrate segment (and optionally the additionalsubstrate and/or optionally an additional substrate segment of thesubstrate).

In accordance with various embodiments, a method for processing asubstrate (including or formed from a monocrystalline region) mayinclude the following: severing the monocrystalline region into at leasttwo partial regions (of which for example at least one first partialregion includes a monocrystalline layer); and forming a micromechanicalstructure including at least one partial region (also referred to asfirst partial region) of the two partial regions.

In accordance with various embodiments, a method can be configured forprocessing a substrate, wherein the substrate includes: a first mainprocessing side and a second main processing side, which are situatedopposite one another; a monocrystalline region on the first mainprocessing side (e.g. adjoining both main processing sides). The methodmay include the following: separating (e.g. severing) the substratethrough the monocrystalline region and along the first main processingside into at least two substrate segments, of which at least onesubstrate segment (also referred to as first substrate segment) includesa monocrystalline layer of the monocrystalline region; and forming amicromechanical structure including the monocrystalline layer.

In accordance with various embodiments, the first substrate segment,e.g. the monocrystalline layer, can be structured.

In accordance with various embodiments, the micromechanical structuremay include a stiffening structure, wherein the stiffening structureincludes the substrate segment. Optionally, the substrate segment of thestiffening structure can be structured.

In accordance with various embodiments, the substrate segment of themicromechanical structure may include a suspension point of themicromechanical structure, i.e. a fixed contact point with theadditional substrate.

In accordance with various embodiments, a method for forming amicromechanical structure may include the following: transferring atleast one substrate segment (e.g. a monocrystalline layer) from a firstsubstrate to a second substrate; and forming a micromechanical structureincluding the at least one substrate segment (e.g. the monocrystallinelayer).

In accordance with various embodiments, the first substrate and thesecond substrate can differ in their chemical composition and/or intheir crystallization type (i.e. polycrystalline or monocrystalline). Byway of example, the first substrate can be monocrystalline and/or thesecond substrate can be polycrystalline.

The monocrystalline substrate segment (e.g. the monocrystalline layer)may include or be formed from at least one of the following: SiC, GaN orSi.

Transferring the monocrystalline substrate segment (e.g. themonocrystalline layer) can be carried out by means of a Smartcut processin accordance with various embodiments.

Before or after transferring the monocrystalline substrate segment (e.g.the monocrystalline layer), altering the monocrystalline substratesegment (e.g. the monocrystalline layer) can be carried out, e.g.chemically and/or structurally. The altering can alter for example themechanical characteristic of the monocrystalline substrate segment (e.g.of the monocrystalline layer) (e.g. the stress and/or prestress thereof)and/or can alter the electrical properties of the monocrystallinesubstrate segment (e.g. of the monocrystalline layer) (e.g. theelectrical conductivity thereof).

In accordance with various embodiments, the micromechanical structurecan be provided in a double electrode configuration or a singleelectrode configuration, e.g. a top single electrode configuration orbottom single electrode configuration.

In accordance with various embodiments, during hydrophilic bonding it ispossible to exploit the fact that water molecules chemisorb on ahydrophilic surface (e.g. of a substrate), as a result of which hydroxylgroups (e.g. in silanol) are formed. If two surfaces including chemisorbed water molecules are brought into physical contact with oneanother, a polymerization of the hydroxyl groups begins (e.g. withrelease of water), e.g. at a temperature as low as room temperature. Anoptional annealing process (e.g. at a temperature in a range ofapproximately 110° C. to approximately 800° C.) can reinforce thisreaction and thus reinforce the adhesion force of the two surfaces withrespect to one another. The hydrophilic surface can be provided forexample by means of an oxide layer, e.g. by means of a silicon oxidelayer.

In accordance with various embodiments, a ratio (also referred to asaspect ratio) of the lateral extent of the freely suspended section tothe vertical extent of the freely suspended section can be greater thanapproximately 1·10³, e.g. greater than approximately 2·10³, e.g. greaterthan approximately 4·10³, e.g. greater than approximately 6·10³.

The lateral extent of the freely suspended section can correspond forexample to the lateral extent (e.g. diameter) of the cavity or of theopening of the substrate which is adjoined by the freely suspendedsection. The vertical extent of the freely suspended section cancorrespond for example to the distance between two cavities betweenwhich the freely suspended section is arranged.

By way of example, the lateral extent can be in a range of approximately400 μm to approximately 1000 μm, e.g. in a range of approximately 600 μmto approximately 850 μm. Alternatively or additionally, the verticalextent can be in a range of approximately 100 nm to approximately 1000nm, e.g. in a range of approximately 150 nm to approximately 350 nm. Inother embodiments, the vertical extent can also be greater than 1 μm.

By way of example, a membrane (e.g. of a microphone) can have a membranediameter of approximately 540 μm and a membrane thickness ofapproximately 330 nm, which results in an aspect ratio of approximately1.6·10³.

In accordance with various embodiments, the freely suspended section canprovide a deflectable region. The freely suspended section can have alower stiffness and/or a flexural strength than the first electrodeand/or than the second electrode. The stiffness can describe the elasticdeformation (e.g. deflection) per acting force. The flexural strengthcan describe the flexure per acting bending moment.

In accordance with various embodiments, the micromechanical structuremay include at least two freely suspended sections, of which a firstfreely suspended section is formed using a substrate segment and has agreater modulus of elasticity and/or a greater mechanical hardness thanthe second freely suspended section of the two freely suspendedsections. The first freely suspended section can for example include orbe formed from (e.g. monocrystalline) SiC and/or include or be formedfrom (e.g. monocrystalline) gallium nitride. Alternatively oradditionally, the first freely suspended section may include a larger(e.g. laterally extended) monocrystalline region than the second freelysuspended section and/or than the substrate.

While the invention has been particularly shown and described withreference to specific embodiments, it should be understood by thoseskilled in the art that various changes in form and detail may be madetherein without departing from the spirit and scope of the invention asdefined by the appended claims. The scope of the invention is thusindicated by the appended claims and all changes which come within themeaning and range of equivalency of the claims are therefore intended tobe embraced.

What is claimed is:
 1. A method of processing a monocrystallinesubstrate, the method comprising: severing the substrate along a mainprocessing side into at least two monocrystalline substrate segments;and forming a micromechanical structure comprising at least onemonocrystalline substrate segment of the at least two substratesegments.
 2. The method of claim 1, wherein the substrate furthermorecomprises a desired separating layer, by means of which the twosubstrate segments are connected to one another; wherein the severing iscarried out by canceling a cohesion of the desired separating layer. 3.The method of claim 2, further comprising: forming the desiredseparating layer by altering a chemical composition between the twosubstrate segments.
 4. The method of claim 3, wherein a resistance ofthe substrate between the two substrate segments vis-à-vis the severingis reduced by means of the altering.
 5. The method of claim 1, furthercomprising: securing the at least one monocrystalline substrate segmenton an additional substrate before the severing.
 6. The method of claim5, wherein the securing comprises bonding the substrate and theadditional substrate onto one another.
 7. The method of claim 5, whereinsecuring is carried out by means of an adhesion layer arranged betweenthe at least one monocrystalline substrate segment and the additionalsubstrate.
 8. The method of claim 5, wherein the additional substratecomprises an electrode; or wherein the electrode is formed by means ofthe at least one monocrystalline substrate segment.
 9. The method ofclaim 5, wherein forming the micromechanical structure comprises formingan additional electrode, and wherein the at least one monocrystallinesubstrate segment is arranged between the additional electrode and theadditional substrate; or wherein the additional electrode is formed bymeans of the at least one monocrystalline substrate segment.
 10. Themethod of claim 1, wherein forming the micromechanical structurecomprises forming a membrane or a cantilever comprising the at least onemonocrystalline substrate segment.
 11. The method of claim 1, furthercomprising: altering at least one of a mechanical characteristic or anelectrical characteristic of the at least one monocrystalline substratesegment by means of an ion implantation.
 12. The method of claim 1,wherein the at least two substrate segments comprise three substratesegments; and at least one of wherein the micromechanical structurecomprises two substrate segments of the three substrate segments orwherein the method furthermore comprises forming an additionalmicromechanical structure comprising a different substrate segment abovethe three substrate segments.
 13. A method of processing a substratecomprising a monocrystalline region, the method comprising: severing themonocrystalline region into at least two partial regions; and forming amicromechanical structure comprising at least one partial region of thetwo partial regions.
 14. A method, comprising: forming a desiredseparating layer in a monocrystalline substrate; securing the substrateon an additional substrate, wherein a substrate segment of the substrateis arranged between the desired separating layer and the additionalsubstrate; severing the substrate in the desired separating layer; andforming a micromechanical structure comprising at least the substratesegment.
 15. The method of claim 1, further comprising: moving the atleast two monocrystalline substrate segments relative to each other.